P-Type Semiconductor Material and Semiconductor Device

ABSTRACT

An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoO y  (2&lt;y&lt;3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO 3 ) as its main component and MoO y  (2&lt;y&lt;3) at 4% or more.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an object, a method, a method forproducing an object, a process, a machine, manufacture, or a compositionof matter. In particular, the present invention relates to, for example,a semiconductor device, a display device, a light-emitting device, adriving method thereof, or a manufacturing method thereof. Moreparticularly, the present invention relates to, for example, asemiconductor material and a semiconductor device using thesemiconductor material.

In this specification, a “semiconductor device” generally refers to adevice which can function by utilizing semiconductor characteristics; atransistor, a diode, a photoelectric conversion device, anelectro-optical device, a light-emitting display device, a memorydevice, an imaging device, a semiconductor circuit, and an electronicdevice are all included in the category of the semiconductor device.

2. Description of the Related Art

Attention has been focused on a technique for forming a photoelectricconversion device and a transistor using semiconductor thin films. Thetransistor is applied to a wide range of semiconductor electronicdevices such as an integrated circuit (IC) and an image display device(also simply referred to as a display device). A silicon-basedsemiconductor material is widely known as a material for a semiconductorthin film applicable to a photoelectric conversion device and atransistor. As another material, an oxide semiconductor has attractedattention.

For example, a technique in which a transistor is manufactured using aZn—O-based oxide or an In—Ga—Zn—O-based oxide as an oxide semiconductoris disclosed (see Patent Documents 1 and 2).

It is known that many oxide semiconductors have n-type conductivity.Examples of oxide semiconductors having n-type conductivity includematerials such as ZnO, In₂O₃, SnO₂, GaO, TeO, GeO₂, WO₃, and MoO₃.

On the other hand, as oxide semiconductors having p-type conductivity,materials such as ZnO, CuAlO₂, NiO, and IrO are known.

Further, a photoelectric conversion device that generates power withoutcarbon dioxide emissions and that does not generate any harmfulemissions has attracted attention as a countermeasure against globalwarming. As a typical example of the photoelectric conversion device, asilicon (Si) solar cell which uses single crystal silicon,polycrystalline silicon, or the like has been known, and has beenactively researched and developed.

In a solar cell using a silicon substrate, a structure having a p-nhomojunction is widely used. Such a structure is formed by diffusion ofimpurities having a conductivity type opposite to that of the siliconsubstrate into one surface of the silicon substrate.

On the other hand, in order to improve output voltage in powergeneration, a structure of a solar cell having a p-n heterojunction inwhich a wide-gap semiconductor material provided as a window layer and asilicon substrate of a photoelectric conversion layer are combined isknown (see Non-Patent Document 1). The p-n heterojunction is formed byformation of a wide-gap semiconductor having a different band gap andconductivity type from those of the silicon substrate on one surface ofthe silicon substrate.

Further, a structure of a silicon solar cell having asemiconductor-insulator-semiconductor (SIS) structure in which a p-nheterojunction is formed with a thin insulating film providedtherebetween is known (see Non-Patent Document 2).

REFERENCE Patent Documents

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861-   [Patent Document 2] Japanese Published Patent Application No.    2007-096055

Non-Patent Documents

-   [Non-Patent Document 1]-   C. Osterwald, G. Cheek, and J. B. DuBow, V. R. Pai Vemerker,    “Molybdenum Trioxide(MoO₃)/Silicon Photodiodes”, Appl. Phys. Lett.,    Vol. 35, No. 10, 15 Nov. 1979-   [Non-Patent Document 2]-   J. Shewchun, J. Dubow, C. W. Wilmsen, R. Singh, D. Burk, J. F.    Wager, “The Operation of The Semiconductor-Insulator-Semiconductor    Solar Cell: Experiment”, J. Appl. Phys., Vol. 50, No. 4, April 1979

SUMMARY OF THE INVENTION

As described above, most of oxide semiconductor materials are materialshaving n-type conductivity, and there are very few oxide semiconductormaterials which are known to have p-type conductivity or both n-type andp-type conductivity. Since oxide semiconductor materials are generallywide-gap semiconductor materials and have optical characteristics andelectric characteristics which are different from those of silicon-basedsemiconductor materials, novel p-type oxide semiconductor materials arerequired so as to form a semiconductor device utilizing thecharacteristics of the oxide semiconductor materials.

Further, in the structure of the photoelectric conversion device havinga p-n heterojunction, output voltage in power generation can be improvedtheoretically by combination of a wide-gap semiconductor materialprovided as a window layer and a silicon substrate of a photoelectricconversion layer. Further, as an optical band gap of the wide-gapsemiconductor material provided as a window layer is larger, lightabsorption loss in the window layer can be reduced; thus, output currentin power generation can be high.

However, actually in the case of a heterojunction, because materialswith different band gaps are bonded to each other, a potential barriermay be formed on both the conduction band side and the valence band sidedue to a wide-gap semiconductor. Accordingly, a p-n junction is notformed without a potential barrier in conduction of photocarriers insome cases. In that case, the conduction of photocarriers is blocked bythe barrier, so that there is a difficulty in taking the photocarriersout; thus, output current is reduced by contraries. Thus, there is aproblem in that the output current in power generation cannot beobtained as high as the theoretical value even in the case where lightabsorption loss is reduced. Further, it has been difficult to obtainoutput voltage in power generation as high as the theoretical valuebecause in terms of manufacturing steps, it has been difficult to form apreferable p-n heterojunction interface and carriers are easilyrecombined at a junction interface.

Furthermore, in the structure of the photoelectric conversion devicehaving a p-n heterojunction in which a wide-gap semiconductor materialand a silicon semiconductor material are combined, the wide-gapsemiconductor material having p-type conductivity generally has a largerband gap or a higher work function than the silicon semiconductormaterial having n-type conductivity; thus, a high potential barrier canbe formed on the conduction band side. With this potential barrier, ahigh built-in potential is obtained and diffusion current or thermalrelease current due to electrons can be suppressed. On the other hand, apotential barrier for holes is the same as that in a p-n homojunction;thus, the diffusion current due to holes are almost the same as that inthe p-n homojunction.

By the control of diode current of diffusion current or thermal releasecurrent due to electrons and diffusion current due to holes,open-circuit voltage that is generally high can be obtained ifphotocurrent is constant, and conversion efficiency can be improved.

Thus, an object of one embodiment of the present invention is to providean oxide semiconductor material having p-type conductivity.Alternatively, it is an object of the present invention to provide asemiconductor device using the oxide semiconductor material. Furtheralternatively, it is an object of the present invention to provide asemiconductor device with low light absorption loss in a window layerand favorable carrier extraction of photocurrent. Further alternatively,it is an object of the present invention to provide a semiconductordevice which has a favorable p-n heterojunction interface and in whichcarrier recombination at the p-n heterojunction interface is suppressed.Further alternatively, it is an object of the present invention toprovide a semiconductor device in which diode current of diffusioncurrent or thermal release current due to electrons and diffusioncurrent due to holes is suppressed and open-circuit voltage andconversion efficiency are improved.

Note that the description of these objects does not impede the existenceof other objects. Note that in one embodiment of the present invention,there is no need to achieve all the objects. Other objects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

One embodiment of the present invention disclosed in this specificationrelates to a p-type semiconductor material, and a semiconductor deviceincluding the p-type semiconductor material.

One embodiment of the present invention disclosed in this specificationis a p-type semiconductor material in which molybdenum trioxide andmolybdenum oxide (MoO_(y) (2<y<3)) having an intermediate compositionbetween molybdenum dioxide and molybdenum trioxide and are mixed.

In the p-type semiconductor material, the proportion of molybdenum oxide(MoO_(y) (2<y<3)) having an intermediate composition between molybdenumdioxide and molybdenum trioxide is preferably 4% or more.

One embodiment of the invention disclosed in this specification is asemiconductor device including, between a pair of electrodes, a siliconsubstrate having n-type conductivity; an oxide semiconductor layerhaving p-type conductivity over one surface of the silicon substrate; alight-transmitting conductive film on the oxide semiconductor layer; animpurity region having n-type conductivity and having a higher carrierconcentration than the silicon substrate, over the other surface of thesilicon substrate. The oxide semiconductor layer is a molybdenum oxidefilm containing molybdenum oxide (MoO_(y) (2<y<3)) having anintermediate composition between molybdenum dioxide and molybdenumtrioxide.

An insulating layer having an opening may be formed between the impurityregion and one of the electrodes, and the impurity region and theelectrode may be in contact with each other in the opening.

Further, a silicon oxide layer may be formed between the siliconsubstrate and the oxide semiconductor layer.

One embodiment of the invention disclosed in this specification is asemiconductor device including, between a pair of electrodes, a siliconsubstrate having n-type conductivity; a first silicon semiconductorlayer having i-type or p-type conductivity over one surface of thesilicon substrate; an oxide semiconductor layer having p-typeconductivity over the first silicon semiconductor layer; alight-transmitting conductive film over the oxide semiconductor layer; asecond silicon semiconductor layer having i-type or n-type conductivityover the other surface of the silicon substrate; and a third siliconsemiconductor layer having n-type conductivity over the second siliconsemiconductor layer. The oxide semiconductor layer is a molybdenum oxidefilm containing molybdenum oxide (MoO_(y) (2<y<3)) having anintermediate composition between molybdenum dioxide and molybdenumtrioxide.

It is to be noted that the ordinal numbers such as “first” and “second”in this specification, etc. are assigned in order to avoid confusionamong components, but not intended to limit the number or order of thecomponents.

The second silicon semiconductor layer preferably has a lower carrierconcentration than the silicon substrate, and the third siliconsemiconductor layer preferably has a higher carrier concentration thanthe silicon substrate.

Further, the oxide semiconductor layer preferably has a higher carrierconcentration than the first silicon semiconductor layer.

In the above structure of the semiconductor device, a silicon oxidelayer may be formed between the first silicon semiconductor layer andthe oxide semiconductor layer.

In the above structure of the semiconductor device, a structure in whichthe first silicon semiconductor layer is not provided may be used.Further, in the above structure of the semiconductor device, a siliconoxide layer may be formed between the silicon substrate and the oxidesemiconductor layer.

Further, the oxide semiconductor layer is preferably a molybdenum oxidefilm containing molybdenum trioxide.

Furthermore, the oxide semiconductor layer is preferably a molybdenumoxide film in which the proportion of molybdenum oxide (MoO_(y) (2<y<3))having an intermediate composition between molybdenum dioxide andmolybdenum trioxide is 4% or more.

One embodiment of the invention disclosed in this specification is asemiconductor device including a silicon substrate having n-typeconductivity; an oxide semiconductor layer having a higher work functionthan the silicon substrate and having p-type conductivity, over onesurface of the silicon substrate; a light-transmitting conductive filmover the oxide semiconductor layer; a first electrode over thelight-transmitting conductive film; and a second electrode over theother surface of the silicon substrate. The second electrode is formedof a material having a lower work function than the silicon substrate.

One embodiment of the invention disclosed in this specification is asemiconductor device including a silicon substrate having n-typeconductivity; an oxide semiconductor layer having a higher work functionthan the silicon substrate and having p-type conductivity, over onesurface of the silicon substrate; a light-transmitting conductive filmover the oxide semiconductor layer; a first electrode over thelight-transmitting conductive film; a second silicon semiconductor layerhaving i-type or n-type conductivity over the other surface of thesilicon substrate; and a second electrode over the second siliconsemiconductor layer. The second electrode is formed of a material havinga lower work function than the silicon substrate.

In the semiconductor device in which the second electrode is formed of amaterial having a lower work function than the silicon substrate, asilicon oxide layer may be formed between the silicon substrate and theoxide semiconductor layer.

In the semiconductor device in which the second electrode is formed of amaterial having a lower work function than the silicon substrate, aninsulating layer having an opening may be formed between the siliconsubstrate and the second electrode, and the silicon substrate and thesecond electrode may be in contact with each other in the opening.

One embodiment of the invention disclosed in this specification is asemiconductor device including a silicon substrate having n-typeconductivity; a first silicon semiconductor layer having i-type orp-type conductivity over one surface of the silicon substrate; an oxidesemiconductor layer having a higher work function than the siliconsubstrate and having p-type conductivity, over the first siliconsemiconductor layer; a light-transmitting conductive film over the oxidesemiconductor layer; a first electrode over the light-transmittingconductive film; a second silicon semiconductor layer having i-type orn-type conductivity over the other surface of the silicon substrate; anda second electrode over the second silicon semiconductor layer. Thesecond electrode is formed of a material having a lower work functionthan the silicon substrate.

A silicon oxide layer may be formed between the first siliconsemiconductor layer and the oxide semiconductor layer.

The first silicon semiconductor layer and the second siliconsemiconductor layer each preferably have a lower carrier concentrationthan the silicon substrate.

In the semiconductor device in which the second electrode is formed of amaterial having a lower work function than the silicon substrate, theoxide semiconductor layer is preferably a molybdenum oxide filmincluding molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide.

In the semiconductor device in which the second electrode is formed of amaterial having a lower work function than the silicon substrate, thesecond electrode is preferably formed of a material whose work functionis 4.2 eV or lower.

In the semiconductor device in which the second electrode is formed of amaterial having a lower work function than the silicon substrate, thesecond electrode preferably contains one or more materials selected fromMg, MgO, MgAg, MgIn, AlLi, BaO, SrO, CaO, GdB, YB₆, LaB₆, Y, Hf, Nd, La,Ce, Sm, Ca, and Gd.

Further, the use of the oxide semiconductor layer enables asemiconductor device having optical characteristics and/or electriccharacteristics which are different from the case of using asilicon-based semiconductor material to be formed.

According to one embodiment of the present invention, an oxidesemiconductor material having p-type conductivity can be provided.Alternatively, a semiconductor device using the oxide semiconductormaterial can be provided. Examples of the semiconductor device include atransistor, a diode, a photoelectric conversion device, anelectro-optical device, a light-emitting display device, a memorydevice, an imaging device, a semiconductor circuit, and an electronicdevice. Alternatively, a semiconductor device with low light absorptionloss in a window layer and favorable carrier extraction of photocurrentcan be provided. Further alternatively, a semiconductor device which hasa favorable p-n heterojunction interface and in which carrierrecombination at the p-n heterojunction interface is suppressed can beprovided. Further alternatively, a semiconductor device in which diodecurrent of diffusion current or thermal release current due to electronsand diffusion current due to holes is suppressed and open-circuitvoltage and conversion efficiency are improved can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows XPS spectra in the vicinity of Mo3d core levels inmolybdenum oxide.

FIG. 2 shows XPS spectra in the vicinity of the valence band inmolybdenum oxide.

FIG. 3 is a correlation diagram of a composition of molybdenum oxide anda gap level.

FIGS. 4A and 4B each show characteristics of a diode in which molybdenumoxide and a silicon substrate are bonded to each other.

FIG. 5 shows comparison of the absorption coefficients between amolybdenum oxide film and an amorphous silicon film.

FIGS. 6A and 6B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 7A and 7B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 8A to 8C are cross-sectional views showing a method formanufacturing a photoelectric conversion device according to oneembodiment of the present invention.

FIGS. 9A to 9C are cross-sectional views showing a method formanufacturing a photoelectric conversion device according to oneembodiment of the present invention.

FIG. 10 is a cross-sectional view showing a photoelectric conversiondevice according to one embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a photoelectric conversiondevice according to one embodiment of the present invention.

FIG. 12 is cross-sectional view showing a photoelectric conversiondevice according to one embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a photoelectric conversiondevice according to one embodiment of the present invention.

FIGS. 14A to 14C are cross-sectional views showing a method formanufacturing a photoelectric conversion device according to oneembodiment of the present invention.

FIGS. 15A to 15C are cross-sectional views showing a method formanufacturing a photoelectric conversion device according to oneembodiment of the present invention.

FIGS. 16A and 16B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 17A and 17B are views each showing a band structure of aphotoelectric conversion device according to one embodiment of thepresent invention.

FIGS. 18A and 18B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 19A and 19B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 20A and 20B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 21A and 21B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIGS. 22A and 22B are cross-sectional views each showing a photoelectricconversion device according to one embodiment of the present invention.

FIG. 23 is a view showing a band structure of a photoelectric conversiondevice.

FIG. 24 is a view showing a band structure of a photoelectric conversiondevice.

FIGS. 25A and 25B are cross-sectional views each showing a photoelectricconversion device.

FIG. 26 is a view showing a band structure of a photoelectric conversiondevice.

FIG. 27 is a view showing a band structure of a photoelectric conversiondevice.

FIGS. 28A to 28C are cross-sectional views each showing a photoelectricconversion device.

FIGS. 29A and 29B are cross-sectional views each showing a photoelectricconversion device.

FIGS. 30A to 30C are cross-sectional views each showing a photoelectricconversion device.

FIGS. 31A to 31F show electronic devices.

FIG. 32 shows comparison of the I-V characteristics among Cell A, CellB, and Cell C.

FIGS. 33A and 33B are cross-sectional views each showing a photoelectricconversion device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the description below, and it is easilyunderstood by those skilled in the art that modes and details disclosedherein can be modified in various ways without departing from the spiritand the scope of the present invention. Therefore, the present inventionis not construed as being limited to description of the embodiments.Note that in all drawings used to illustrate the embodiments, portionsthat are identical or portions having similar functions are denoted bythe same reference numerals, and their repetitive description may beomitted.

Embodiment 1

In this embodiment, an oxide semiconductor material that is oneembodiment of the disclosed invention is described with reference toFIG. 1, FIG. 2, FIG. 3, and FIG. 5.

As the oxide semiconductor material of one embodiment of the presentinvention, molybdenum oxide can be used. Molybdenum oxide is preferablesince it is stable even in air, has a low hygroscopic property, and iseasily treated. Further, oxides of metals that belong to Group 4 toGroup 8 of the periodic table can also be used. Specific examplesthereof include vanadium oxide, niobium oxide, tantalum oxide, chromiumoxide, tungsten oxide, manganese oxide, and rhenium oxide.

As molybdenum oxide of the oxide semiconductor material, a material(hereinafter referred to as MoO₃+MoO_(y) (2<y<3)) in which molybdenumtrioxide (hereinafter referred to as MoO₃) and molybdenum oxide(hereinafter referred to as MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide are mixedis preferably used.

The conductivity of MoO₃+MoO_(y) (2<y<3) can be p-type conductivity. Toobtain a p-type semiconductor material having a high carrierconcentration, the proportion of MoO_(y) (2<y<3) in the composition ofMoO₃+MoO_(y) (2<y<3) is preferably set to 4% or more.

Note that the material having p-type conductivity in this specificationincludes a material in which the Fermi level is closer to the valenceband than to the conduction band, and a material in which holes that arep-type carriers can be transferred, and a material in whichcurrent-voltage (I-V) characteristics exhibit rectifying properties byband bending due to difference in work functions caused when thematerial having p-type conductivity is bonded to a material havingn-type conductivity.

Examples of the above-described MoO_(y) (2<y<3) include Mo₂O₅, Mo₃O₈,Mo₈O₂₃, Mo₉O₂₆, Mo₄O₁₁, Mo₁₇O₄₇, Mo₅O₁₄, and the one which has anintermediate composition between MoO₂ and MoO₃ due to a deficiency of apart of oxygen atoms in MoO₃.

A MoO₃+MoO_(y) (2<y<3) film can be formed by a vapor phase method suchas an evaporation method, a sputtering method, or an ion plating method.As an evaporation method, a method in which a material of molybdenumoxide alone is evaporated, or a method in which a material of molybdenumoxide and an impurity imparting conductivity type are co-evaporated maybe used. Note that the co-evaporation refers to an evaporation method inwhich evaporation is carried out from a plurality of evaporation sourcesat the same time in one treatment chamber. In a sputtering method,molybdenum oxide, molybdenum, or any of the above materials whichcontains an impurity imparting a conductivity type may be used as atarget, and oxygen or a mixed gas of oxygen and a rare gas such as argonmay be used as a sputtering gas. As an ion plating method, a film may beformed in plasma containing oxygen using a material similar to thematerial used in the sputtering method described above.

In this embodiment, a method in which a material of molybdenum oxidealone is evaporated is used so as to form the MoO₃+MoO_(y) (2<y<3) filmhaving p-type conductivity. As an evaporation source, powder ofmolybdenum oxide can be used.

The purity of the powder of molybdenum oxide is preferably 99.99% (4N)to 99.9999% (6N). The evaporation is preferably performed in a highvacuum of 5×10⁻³ Pa or less, preferably 1×10⁻⁴ Pa or less.

For example, when molybdenum trioxide powder (4N MOO03PB) manufacturedby Kojundo Chemical Laboratory Co., Ltd. is put in a tungsten boat(BB-3) manufactured by Furuuchi Chemical Corporation, andresistance-heating evaporation is performed on a silicon substrate at adeposition rate of 0.2 nm/s in a vacuum of less than or equal to 1×10⁻⁴Pa, a MoO₃+MoO_(y) (2<y<3) film having p-type conductivity, which has amixed composition including MoO₃ at about 90% and MoO_(y) (2<y<3) atabout 10% can be obtained. Note that the electric conductivity, therefractive index, the extinction coefficient, the optical band gapobtained from a Tauc plot, and the ionization potential of the film are1×10⁻⁶ S/cm to 3.8×10⁻³ S/cm (dark conductivity), 1.6 to 2.2 (awavelength: 550 nm), 6×10⁻⁴ to 3×10⁻³ (a wavelength: 550 nm), 2.8 eV to3 eV, and about 6.4 eV, respectively.

Further, the MoO₃+MoO_(y) (2<y<3) film has a high passivation effect andcan reduce defects on a surface of silicon, whereby the lifetime ofcarriers can be improved.

For example, in the case where the MoO₃+MoO_(y) (2<y<3) film is formedas a passivation film over both surfaces of an n-type single crystalsilicon substrate having a resistivity of approximately 9 Ω·cm, it hasbeen confirmed that the effective lifetime at this time is about 400μsec by a microwave detected photoconductivity decay (μ-PCD) method.Further, the lifetime of the n-type single crystal silicon substrate, onwhich chemical passivation using an alcoholic iodine solution has beenperformed, which is the bulk lifetime of the single crystal siliconsubstrate, is also about 400 msec. Note that the effective lifetime ofthe n-type single crystal silicon substrate where a passivation film isnot formed is about 40 μsec.

In FIG. 5, the light absorption coefficient of the MoO₃+MoO_(y) (2<y<3)film formed over a glass substrate by the above evaporation method iscompared with that of an amorphous silicon film formed by a plasma CVDmethod, which is a comparative example. The light absorption coefficientof the MoO₃+MoO_(y) (2<y<3) film is small in a wide wavelength range,and thus it is found that the MoO₃+MoO_(y) (2<y<3) film has a highlight-transmitting property.

The ratio of MoO₃ to MoO_(y) (2<y<3) in MoO₃+MoO_(y) (2<y<3) is foundout, for example, by examining Mo3d core levels by X-ray photoelectronspectroscopy (XPS). Here, the ratio means the ratio of Mo elementshaving a MoO₃ bond to Mo elements having a MoO_(y) (2<y<3) bond.

FIG. 1 shows XPS spectra in the vicinity of Mo3d core levels of samplesA to D in which molybdenum oxide films with different depositionconditions are individually formed over silicon substrates, which aremeasured with incident energy of 1486.6 eV (an X-ray source:monochromatic A1 X-ray) and an extraction angle of 45°.

It is known that the peak position in binding energy of Mo3d_(5/2) corelevels in molybdenum is about 227.9 eV, that in molybdenum dioxide(MoO₂) is about 229.6 eV, and that in molybdenum trioxide (MoO₃) isabout 232.8 eV. Thus, the composition of the molybdenum oxide film canbe specified by the peak position (chemical shift) of Mo3d_(5/2) corelevels with XPS.

In the XPS spectra of all the samples shown in FIG. 1, the Mo3d_(5/2)peak positions are located around 232.8 eV; accordingly, it is foundthat the main component of the samples is molybdenum trioxide (MoO₃).

Further, from the XPS peak shapes, it is found that components otherthan molybdenum trioxide (MoO₃) are contained in the molybdenum oxidefilms of the samples. It is turned out by peak separation in thespectrum of each sample that a component of molybdenum oxide (MoO_(y)(2<y<3)) having an intermediate composition between molybdenum dioxideand molybdenum trioxide is contained. Note that each of the molybdenumoxide films hardly contain a component of molybdenum dioxide (MoO₂),which is about 1% or less.

The XPS peak intensity is proportional to the composition and an elementdensity. Thus, the ratio of MoO₃ to MoO_(y) (2<y<3) in the molybdenumoxide film can be specified by examining the ratio of the integratedvalue of the peak exhibiting a MoO₃ component to the integrated value ofthe peak exhibiting a MoO_(y) (2<y<3) component. The proportion ofMoO_(y) (2<y<3) observed from the XPS spectrum of sample A is about 26%;that of sample B is about 10%; that of sample C is about 4%; and that ofsample D is about 3% or less.

The molybdenum oxide film has p-type conductivity by the molybdenumoxide (MoO_(y) (2<y<3)) having an intermediate composition betweenmolybdenum dioxide and molybdenum trioxide. FIG. 2 shows the states ofsamples A to D in the valence bands measured by XPS. The XPS spectra inFIG. 2 are spectra in the vicinity of the valence band, which aremeasured with incident energy of 1486.6 eV (an X-ray source:monochromatic A1 X-ray) and an extraction angle of 45°. Note that thebinding energy is energy based on the Fermi level (E_(F)). Note that ageneral correction method by which a C1s peak is adjusted to 284.6 eV isused as the energy axis.

The XPS spectra of the valence band each include peak intensityproportional to the state density of the valence band. The peak 112around the binding energy of 1.7 eV shown in FIG. 2 is a peak of a gaplevel. Further, the peak 113 at the binding energy of 3.5 eV or more isa peak of a bulk in which MoO₃ is a main component.

FIG. 2 shows that the peak intensity of the gap level increases as theproportion of MoO_(y) (2<y<3) in the molybdenum oxide film increases.Further, it can be seen that as the ratio of MoO_(y) (2<y<3) is higher,energy at an energy band constituted by gap levels and energy at theFermi level (E_(F)) are closer to each other; thus, p-type conductivityis more likely to be obtained.

It can be said that the gap levels are filled with electrons since theyare observed by XPS. The conduction band not shown in FIG. 2 is notobserved by XPS because it is not filled with electrons. However, theFermi level (E_(F)) exists between the conduction band and the gaplevels filled with electrons. If the same number of carriers are excitedin the conduction band and the gap levels filled with electronsthermally or in the equilibrium state under irradiation with light, itcan be said that the Fermi level (E_(F)) is getting closer to the gaplevel side because the state density in the conduction band that is abulk level is higher than that in the gap level. Further, the gap levelshave a higher state density as can be observed by XPS. The gap levelsact as one of energy bands of the conduction band to which holes aretransferred, whereby p-type conductivity can be obtained. Thus, themolybdenum oxide film containing MoO_(y) (2<y<3) which contributes to anincrease in the state density in the gap levels can have p-typeconductivity.

The following can be given as another reason that molybdenum oxide hasp-type conductivity. For example, as for a molybdenum oxide film inwhich the proportion of MoO_(y) (2<y<3) is about 10% or more, the energydifference between the energy (E_(q)) that is energy on the top of thevalence band of the peak 112 and the Fermi level (E_(F)) in FIG. 2showing the valence band XPS spectrum is about 0.3 eV to 0.7 eV. Inaddition, activation energy corresponding to energy difference betweenthe energy (E_(v)) that is energy on the top of the valence bandobtained from electric conductivity with respect to a temperature changeand the Fermi level (E_(F)), is about 0.41 eV corresponding to the valueobtained from the XPS spectrum. The optical band gap of the molybdenumoxide film is about 3.2 eV; thus, the energy difference between themidgap (E_(i)) that is half of the optical band gap and the Fermi level(E_(F)) is about 1.6 eV. Further, the energy difference between the topof the valence band (E_(v)) and the Fermi level (E_(F)) is about 0.3 eVto 0.7 eV, and the energy difference between the top of the valence band(E_(v)) and the Fermi level (E_(F)) is smaller. Thus it can be said thatthe molybdenum oxide film has p-type conductivity. Note that themolybdenum oxide film has a state density as high as that can beobserved by XPS whose detection sensitivity is a percent level. Theoptical band gap can be measured by optical transition of an energy inthe vicinity of the top of the valence band of the peak 112.

FIG. 3 is a correlation diagram between the proportion of MoO_(y)(2<y<3) in the molybdenum oxide film shown in FIG. 1 and the integratedintensity of the XPS peak of the gap level in the vicinity of thebinding energy of 1.7 eV in the valence band shown in FIG. 2. Further,it is found from verification tests for rectifying properties of anelement that the proportion of MoO_(y) (2<y<3) is preferably 4% or moreso that the molybdenum oxide film containing MoO₃ and MoO_(y) (2<y<3)has p-type conductivity.

Note that it is known that molybdenum trioxide (MoO₃) has n-typeconductivity. Thus, not only a semiconductor device using molybdenumoxide having p-type conductivity but also a semiconductor device inwhich molybdenum oxide having p-type conductivity and molybdenum oxidehaving n-type conductivity are combined can be formed.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 2

In this embodiment, a structure of a photoelectric conversion device ofone embodiment of the disclosed invention and a manufacturing methodthereof are described with reference to FIGS. 6A and 6B, FIGS. 7A and7B, FIGS. 8A to 8C, and FIGS. 9A to 9C.

First, a structure of a photoelectric conversion device that is oneembodiment of the present invention is described.

FIG. 6A shows an example of a schematic cross-sectional view of thephotoelectric conversion device that is one embodiment of the presentinvention. The photoelectric conversion device includes a siliconsubstrate 100; an oxide semiconductor layer 110 over one surface of thesilicon substrate; an impurity region 130 over the other surface of thesilicon substrate; a light-transmitting conductive film 150 over theoxide semiconductor layer 110; a first electrode 170 in contact with thelight-transmitting conductive film; and a second electrode 190 incontact with the impurity region 130. Note that the first electrode 170is a grid electrode, and a surface on the first electrode 170 sideserves as a light-receiving surface.

The silicon substrate 100 has one conductivity type, and the oxidesemiconductor layer 110 is a semiconductor layer having a conductivitytype opposite to that of the silicon substrate 100. Accordingly, a p-njunction is formed between the silicon substrate 100 and the oxidesemiconductor layer 110.

Here, in the photoelectric conversion device of one embodiment of thepresent invention, a semiconductor layer having p-type conductivity isused as the oxide semiconductor layer 110; thus, a silicon substratehaving n-type conductivity is used as the silicon substrate 100.

The light-transmitting conductive film 150 is preferably formed over theoxide semiconductor layer 110. The provision of the light-transmittingconductive film 150 enables resistance loss between the oxidesemiconductor layer 110 and the first electrode 170 to be reduced.However, in the case where the resistance of the oxide semiconductorlayer 110 is sufficiently low or in the case where the manufacturedphotoelectric conversion device is used for low-current applicationswhich are not affected by the resistance loss, a structure in which thelight-transmitting conductive film 150 is not provided as illustrated inFIG. 6B may be employed.

The impurity region 130 is a back surface field (BSF) layer, which hasthe same conductivity type as the silicon substrate 100 and has a highercarrier concentration than the silicon substrate 100. When the BSF layeris formed, an n-n⁺ junction or a p-p⁺ junction is formed, wherebyrecombination of minority carriers in the vicinity of the secondelectrode 190 can be prevented by the potential barrier due to the bandbending.

Note that in this specification, in the case where materials which havethe same conductivity type and have different carrier concentrationsneed to be distinguished, the conductivity type of a material having arelatively higher carrier concentration than an n-type or p-type siliconsubstrate is referred to as n⁺-type or p⁺-type, whereas the conductivitytype of a material having a relatively lower carrier concentration thanan n-type or p-type silicon substrate is referred to as n⁻-type orp⁻-type.

Although not shown in FIGS. 6A and 6B, the silicon substrate 100 mayhave a texture structure in which the silicon substrate 100 is processedto have unevenness as shown in FIG. 9C. The texture structure providedon the light-receiving surface side can reduce reflection loss at thesurface because incident light is reflected in a multiple manner.Further, in the texture structure, light enters a photoelectricconversion region obliquely by the difference in refractive indexesbetween the silicon substrate that has a high refractive index and thatis a photoelectric conversion region and air that has a low refractiveindex and that is a light incidence medium. Thus, the optical pathlength is increased and reflection between the front surface and theback surface of the photoelectric conversion region is repeated, wherebya so-called light trapping effect can occur. The light which enters thesilicon substrate travels, in accordance with Snell's law, between theair that is a light incidence medium and the silicon substrate having ahigh refractive index in a direction that is close to the normaldirection to the unevenness on the surface of the silicon substrate.Thus, by the texture structure in which the surface of the siliconsubstrate has various angles with an uneven surface, incident light isrefracted in a direction that is close to the normal direction to thesurface with the texture structure and the light travels. Accordingly,the incident light travels obliquely to the thickness direction of thesilicon substrate and the optical path length can be increased. Thetexture structure may be provided for both surfaces of the siliconsubstrate as shown in FIG. 9C, or either the front or back surface ofthe silicon substrate.

Further, a photoelectric conversion device of one embodiment of thepresent invention may have the structure shown in FIG. 7A or 7B. Thephotoelectric conversion devices shown in FIGS. 7A and 7B each includethe silicon substrate 100 having one conductivity type, and furtherincludes, over one surface of the silicon substrate 100, the oxidesemiconductor layer 110 having a conductivity type opposite to that ofthe silicon substrate 100, the light-transmitting conductive film 150over the oxide semiconductor layer 110, and the first electrode 170 incontact with the light-transmitting conductive film. Furthermore, thephotoelectric conversion device includes, over the other surface of thesilicon substrate 100, the impurity region 130 having the sameconductivity type as the silicon substrate 100 and having a highercarrier concentration than the silicon substrate 100, a passivationlayer 180, and the second electrode 190 in contact with the impurityregion 130.

The passivation layer 180 can be formed using a silicon oxide film, asilicon nitride film, a silicon nitride oxide (SiN_(x)O_(y) (x>y>0))film, a silicon oxynitride (SiO_(x)N_(y) (x>y>0)) film, an aluminumoxide film, or the like. The provision of the passivation layer 180enables recombination of minority carriers at the back surface of thesilicon substrate 100 to be reduced, which contributes to improvement inoutput voltage of the photoelectric conversion device in powergeneration. Further, with the use of a film formed of a material havinga lower refractive index than the silicon substrate as the passivationlayer 180, reflectance at the back surface of the silicon substrate canbe increased, which also contributes to improvement in output current ofthe photoelectric conversion device in power generation.

The photoelectric conversion device shown in FIG. 7A has a structure inwhich the impurity region 130 is formed on the entire back surface ofthe silicon substrate and the impurity region 130 is in contact with thesecond electrode 190 in openings provided in the passivation layer 180.Further, the photoelectric conversion device shown in FIG. 7B has astructure in which the impurity region 130 is provided only in thevicinity of the openings in the passivation layer 180 and the impurityregion 130 is in contact with the second electrode 190 in the openings.By the provision of the passivation layer 180, the minority carrierdensity can be reduced; on the other hand, the recombination rate at thesurface of the impurity region 130 and the passivation layer 180 isincreased; that is, there is a trade-off therebetween.

Therefore, in consideration of the quality of the passivation layer 180;that is, in consideration of the surface recombination rate at theinterface between the passivation layer 180 and the silicon substrate, apractitioner may determine the structure so as to obtain more favorableelectric characteristics. For example, in the case where the quality ofthe passivation layer 180 is low and the surface recombination rate ishigh, the impurity region 130 is preferably provided for the entire backsurface of the silicon substrate because the minority carrier densityitself which causes recombination at the back surface of the siliconsubstrate can be lowered and occurrence of the recombination at the backsurface of the silicon substrate can be suppressed. On the contrary, inthe case where the quality of the passivation layer 180 is high and thesurface recombination rate is low, the impurity region 130 is preferablyprovided only for the vicinity of the openings because a contactinterface between the impurity region 130 and the passivation layer 180,which is a cause for the low recombination rate, can be reduced andrecombination at the entire back surface of the silicon substrate can besuppressed.

Note that the photoelectric conversion device may have a structure inwhich the structures of FIGS. 6A and 6B and FIGS. 7A and 7B and atexture structure provided with unevenness are combined as appropriate.

For the oxide semiconductor layer 110 in one embodiment of the presentinvention, molybdenum oxide can be used. Molybdenum oxide is preferablesince it is stable in the air, has a low hygroscopic property, and iseasily treated.

The conductivity type of the oxide semiconductor layer 110 can bechanged by mixing a plurality of oxides. For example, molybdenum oxideis formed to be a mixed composition including molybdenum trioxide (MoO₃)and molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide, so thatp-type conductivity can be provided. The mixed composition containsMoO_(y) (2<y<3) at 4% or more, so that a p-type semiconductor with ahigh carrier concentration can be obtained. Note that the term “p-typeconductivity” herein means that the Fermi level is closer to the valenceband than to the conduction band, holes that are p-type carriers can betransferred, and current-voltage (I-V) characteristics of an elementbonded to a semiconductor material having n-type conductivity exhibitrectifying properties by band bending due to the difference in workfunctions caused when the material having p-type conductivity is bondedto a semiconductor material having n-type conductivity.

Further, an impurity is added to the oxide semiconductor layer, wherebythe conductivity type can be changed. Furthermore, even in the casewhere an impurity is not intentionally added to the oxide semiconductorlayer, a defect in the oxide semiconductor layer, and a slight amount ofan impurity introduced during the deposition cause the formation of adonor level or an acceptor level in some cases, so that the oxidesemiconductor layer exhibits n-type or p-type conductivity in somecases.

Further, as shown in FIG. 5, the light absorption coefficient of themolybdenum oxide film is small in a wide wavelength range; thus, thelight-transmitting property is high. Therefore, a metal oxide having alight-transmitting property, e.g., the molybdenum oxide film is used asa window layer of the photoelectric conversion device, whereby lightabsorption loss in the window layer is reduced and photoelectricconversion can be efficiently performed in a light absorption region.Further, as described above, the metal oxide has extremely a highpassivation effect on the silicon surface. Accordingly, the electriccharacteristics of the photoelectric conversion device can be improved.

Next, methods for manufacturing the photoelectric conversion devicesshown in FIGS. 6A and 6B are described with reference to FIGS. 8A to 8Cand FIGS. 9A to 9C.

A single crystal silicon substrate or a polycrystalline siliconsubstrate can be used for the silicon substrate 100 that can be used inone embodiment of the present invention. The method for manufacturingthe silicon substrate is not particularly limited. In this embodiment,described is an example in which an n-type single crystal siliconsubstrate whose surface corresponds to the (100) plane and which ismanufactured by a Magnetic Czochralski (MCZ) method is used.

In the case where the initial single crystal silicon substrate is asubstrate which is subjected to only a slicing process, a damage layerwith a thickness of 10 μm to 20 μm, remaining on the surface of thesingle crystal silicon substrate, is removed by a wet etching process.For an etchant, an alkaline solution with a relatively highconcentration, for example, 10% to 50% sodium hydroxide solution, or 10%to 50% potassium hydroxide solution can be used. Alternatively, a mixedacid in which hydrofluoric acid and nitric acid are mixed, or the mixedacid to which acetic acid is further added may be used.

Next, impurities adhering to the surfaces of the single crystal siliconsubstrate from which the damage layers have been removed are removed byacid cleaning. As an acid, for example, a mixture (FPM) of 0.5%hydrofluoric acid and 1% hydrogen peroxide, or the like can be used.Alternatively, RCA cleaning or the like may be performed. Note that thisacid cleaning may be omitted.

An example of forming a texture structure in which the silicon substrate100 is processed to have unevenness in order to reduce light loss due tomultiple reflection at the surface of the silicon substrate 100 and totrap light for the increase in an optical path length, is described. Inthe case of using the single crystal silicon substrate having the (100)plane on the surface as described above, a pyramidal textured structurecan be formed by anisotropic etching utilizing a difference in etchingrates among plane orientations using an alkaline solution.

For the etchant used when the pyramidal textured structure is formed onthe single crystal silicon substrate having (100) plane on its surface,an alkaline solution such as a sodium hydroxide solution or a potassiumhydroxide solution can be used. For an etchant, 1% to 5% sodiumhydroxide solution, or 1% to 5% potassium hydroxide solution can beused, preferably several percent isopropyl alcohol is added thereto. Thetemperature of the etchant is 70° C. to 90° C., and the single crystalsilicon substrate is soaked in the etchant for 30 to 60 minutes. By thistreatment, pyramidal unevenness including a plurality of minuteprojections each having a substantially square pyramidal shape andrecessions formed between adjacent projections can be formed on thesurfaces of the single crystal silicon substrate.

Note that in the case where a single crystal silicon substrate otherthan the single crystal silicon substrate having the (100) plane on thesurface or a polycrystalline silicon substrate is used as the siliconsubstrate 100, unevenness may be formed by dry etching, wet etchingusing a metal catalyst such as silver, or the like.

Next, an oxide layer which is non-uniformly formed on the siliconsurface in the etching step for forming the unevenness is removed.Another purpose to remove the oxide layer is to remove a component ofthe alkaline solution, which is likely to remain in the oxide layer.When an alkali metal ion, e.g., an Na ion or a K ion enters silicon, thelifetime is decreased, and the electric characteristics of thephotoelectric conversion device are drastically lowered as a result.Note that in order to remove the oxide layer, 1 to 5% dilutedhydrofluoric acid may be used.

Next, the surface of the single crystal silicon substrate is preferablyetched with a mixed acid in which hydrofluoric acid and nitric acid aremixed, or the mixed acid to which acetic acid is further added so thatimpurities such as a metal component are removed from the surface. Byadding the acetic acid, oxidizing ability of nitric acid can be kept soas to stably perform the etching, and the etching rate can be adjusted.For example, the volume ratio of hydrofluoric acid, nitric acid, andacetic acid can be 1:1.5 to 3:2 to 4. Note that in this specification,the mixed acid solution containing hydrofluoric acid, nitric acid, andacetic acid is referred to as HF-nitric-acetic acid. Note that in thecase where the etching with the HF-nitric-acetic acid is performed, theabove step of removing the oxide layer with diluted hydrofluoric acidcan be omitted. Though these steps, the texture structure in whichunevenness is formed on the surface of the silicon substrate 100 can beformed (see FIG. 8A).

Next, impurities imparting the same conductivity as the siliconsubstrate 100 are diffused into a surface layer on the back surface ofthe silicon substrate 100, which is opposite to the light-receivingsurface, whereby the impurity region 130 is formed (see FIG. 8B). In thecase of using a silicon substrate 100 having n-type conductivity, as animpurity imparting n-type conductivity, phosphorus, arsenic, antimony,or the like can be used. For example, the silicon substrate 100 issubjected to heat treatment at a temperature higher than or equal to800° C. and lower than or equal to 900° C. in an atmosphere ofphosphorus oxychloride, whereby phosphorus can be diffused at a depth ofapproximately 0.5 μm from the surface of the silicon substrate 100.

The impurity region 130 is formed only on the back surface of thesilicon substrate 100, which is opposite to the light-receiving surface.Thus, the following steps may be performed in order that impurities arenot diffused into the light-receiving surface: the light-receivingsurface side is covered with a mask formed using a heat resistantmaterial, such as an inorganic insulating film, by a known method, andthe mask is removed after the formation of the impurity region 130.Alternatively, the following steps may be performed: impurities arediffused into both the front surface and the back surface of the siliconsubstrate 100 to form an impurity region; the back surface is coveredwith a mask; and the impurity layer on the light-receiving surface isetched to be removed.

Next, after appropriate cleaning, the oxide semiconductor layer 110having a conductivity type opposite to that of the silicon substrate 100is formed over the surface of the silicon substrate 100, which serves asa light-receiving surface (see FIG. 8C). Here, a molybdenum oxide filmis used as the oxide semiconductor layer 110.

The molybdenum oxide film can be formed by a vapor phase method such asan evaporation method, a sputtering method, or an ion plating method. Asan evaporation method, a method in which a material of molybdenum oxidealone is evaporated, or a method in which a material of molybdenum oxideand an impurity imparting p-type conductivity are co-evaporated may beused. Note that the co-evaporation refers to an evaporation method inwhich evaporation is carried out from a plurality of evaporation sourcesat the same time in one treatment chamber. In a sputtering method,molybdenum oxide, molybdenum, or a material containing an impurityimparting a conductivity type thereto may be used as a target, andoxygen or a mixed gas of oxygen and a rare gas such as argon may be usedas a sputtering gas. As an ion plating method, a method in which a filmis formed in plasma containing oxygen using a material similar to thematerial used in the sputtering method described above may be used.

In this embodiment, powder of molybdenum oxide is used as an evaporationsource in order to form a molybdenum oxide film having p-typeconductivity. Further, a co-evaporation method in which molybdenum orthe like is added to powder of molybdenum oxide may be used. Themolybdenum oxide film which can be used in this embodiment has, forexample, a mixed composition including molybdenum trioxide (MoO₃) andmolybdenum oxide (MoO_(y) (2<y<3)) having an inter mediate compositionbetween molybdenum dioxide and molybdenum trioxide. Note that themolybdenum oxide film preferably contains MoO_(y) (2<y<3) at 4% or morein order to increase a carrier concentration. The purity of the powderof molybdenum oxide is preferably 99.99% (4N) to 99.9999% (6N). Theevaporation is preferably performed in a high vacuum of 5×10⁻³ Pa orless, preferably 1×10⁻⁴ Pa or less.

Next, the second electrode 190 is formed over the impurity region 130(see FIG. 9A). The second electrode 190 can be a single layer or a stackof a conductive film formed using a low-resistance metal such as silver,aluminum, or copper; indium tin oxide; indium tin oxide containingsilicon; indium oxide containing zinc; zinc oxide; zinc oxide containinggallium; zinc oxide containing aluminum; tin oxide; tin oxide containingfluorine; tin oxide containing antimony; graphene; or the like. As adeposition method, a sputtering method, a vacuum evaporation method, orthe like can be used. Alternatively, the second electrode 190 may beformed in such a manner that a conductive resin such as a silver paste,a copper paste, or an aluminum paste is applied by a screen printingmethod and baked.

Next, the light-transmitting conductive film 150 is formed over theoxide semiconductor layer 110 (see FIG. 9B). For the light-transmittingconductive film, the following can be used: indium tin oxide; indium tinoxide containing silicon; indium oxide containing zinc; zinc oxide; zincoxide containing gallium; zinc oxide containing aluminum; tin oxide; tinoxide containing fluorine; tin oxide containing antimony; graphene, orthe like. The light-transmitting conductive film is not limited to asingle layer, and may have a stacked structure of different films. Forexample, a stacked layer of an indium tin oxide and a tin oxidecontaining antimony, a stacked layer of an indium tin oxide and a tinoxide containing fluorine, etc. can be used. The light-transmittingconductive film can be formed by a sputtering method or the like. Thetotal thickness is preferably greater than or equal to 10 nm and lessthan or equal to 1000 nm. For example, the light-transmitting conductivefilm 150 is formed using indium tin oxide and the thickness thereof isset to 70 nm so as to reduce optical reflectance.

Next, the first electrode 170 is formed over the light-transmittingconductive film 150 (see FIG. 9C). The first electrode 170 is a gridelectrode and is preferably formed in such a manner that a conductiveresin such as a silver paste, a copper paste, a nickel paste, amolybdenum paste, or an aluminum paste is applied by a screen printingmethod and baked. Further, the first electrode 170 may be a stackedlayer of different materials, such as a stacked layer of a silver pasteand a copper paste. Further, the conductive resin may be applied by adispensing method or an ink-jet method.

Further, in order to form a photoelectric conversion device having thestructure illustrated in FIG. 6B, a step for limning thelight-transmitting conductive film 150 may be omitted.

Further, in order to form a photoelectric conversion device having thestructure shown in either of FIGS. 7A and 7B, a silicon oxide film or asilicon nitride film may be provided as the passivation layer 180 havingopenings between the step of FIG. 8A and the step of FIG. 8B. Thepassivation layer 180 can be formed by a thermal oxidation method, aplasma CVD method, or the like.

Note that the order of the steps shown in FIGS. 8A to 8C and FIGS. 9A to9C may be changed as appropriate.

In this manner, the photoelectric conversion device of one embodiment ofthe present invention is formed.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 3

In this embodiment, a photoelectric conversion device whose structure isdifferent from the structures of the photoelectric conversion devices inEmbodiment 2, and a method for manufacturing the photoelectricconversion device is described with reference to FIG. 10, FIG. 11, FIG.12, FIG. 13, FIGS. 14A to 14C, and FIGS. 15A to 15C. Note that detaileddescription of portions which are similar to those of Embodiment 2 isomitted in this embodiment.

FIG. 10 is a cross-sectional view of a photoelectric conversion devicethat is one embodiment of the present invention. The photoelectricconversion device includes a silicon substrate 200; a first siliconsemiconductor layer 201, an oxide semiconductor layer 210, alight-transmitting conductive film 250, and a first electrode 270 whichare formed over one surface of the silicon substrate 200; and a secondsilicon semiconductor layer 202, a third silicon semiconductor layer203, and a second electrode 290 which are formed over the other surfaceof the silicon substrate 200. Note that the first electrode 270 is agrid electrode, and the surface on which the first electrode 270 isformed serves as a light-receiving surface.

The oxide semiconductor layer 210 can be formed using the same materialas the oxide semiconductor layer 110 having p-type conductivitydescribed in Embodiments 1 and 2. For example, an oxide semiconductorcontaining molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide may beused.

In conventional photoelectric conversion devices, a window layer isformed using a silicon material; therefore, the light absorption in thewindow layer is a heavy loss. In one embodiment of the presentinvention, a light-transmitting metal oxide is used for a window layerof the photoelectric conversion device, whereby light absorption loss inthe window layer is reduced, and photoelectric conversion can beefficiently performed in a light absorption region.

Further, FIG. 10 shows an example of a texture structure in which afront surface and a back surface of the silicon substrate 200 areprocessed to have unevenness. On the surface processed to have thetexture structure, incident light is reflected in a multiple manner, andthe light travels obliquely into a photoelectric conversion region;thus, the optical pass length is increased. In addition, a so-calledlight trapping effect in which light reflected by the back surface istotally reflected by the surface can occur.

Note that as shown in FIG. 11, a structure in which only one of thefront surface and the back surface of the silicon substrate 200 isprocessed to have unevenness may be employed. The surface area of thesilicon substrate is increased by the unevenness; thus, while theoptical effect described above can be obtained, the absolute amount ofsurface defects is increased. Therefore, in consideration of the balancebetween the optical effect and the amount of the surface defects, apractitioner may determine the structure so that more favorable electriccharacteristics can be obtained.

Alternatively, as shown in FIG. 12, a structure in which the secondelectrode 290 is also a grid electrode and a light-transmittingconductive film 280 is provided between the third silicon semiconductorlayer 203 and the second electrode 290 so that both surfaces of thesilicon substrate 200 serve as light-receiving surfaces may be employed.

Further, as shown in FIG. 13, a structure in which the first siliconsemiconductor layer 201 is not provided and the silicon substrate 200and the oxide semiconductor layer 210 are in direct contact with eachother may be employed. As described in Embodiment 1, the oxidesemiconductor layer which can be used for the photoelectric conversiondevice of one embodiment of the present invention has a high passivationeffect on the silicon surface, so that the light-transmittingsemiconductor layer can be favorably bonded to the silicon substrate200.

Note that the photoelectric conversion device may have a structure inwhich structures of FIG. 10, FIG. 11, FIG. 12, and FIG. 13 are combinedas appropriate.

As each of the first silicon semiconductor layer 201 and the secondsilicon semiconductor layer 202, a semiconductor layer containinghydrogen and few defects can be used, so that defects on the surface ofthe silicon substrate 200 can be terminated. The semiconductor layer ispreferably formed using an amorphous silicon semiconductor.

For each of the first silicon semiconductor layer 201 and the secondsilicon semiconductor layer 202, an i-type silicon semiconductor layercan be used, for example. In this embodiment, an n-type siliconsubstrate is used as the silicon substrate 200; accordingly, a p-typesilicon semiconductor layer can be used for each of the first siliconsemiconductor layer 201 and the second silicon semiconductor layer 202.

It is to be noted that in this specification, the term “i-typesemiconductor” refers not only to a so-called intrinsic semiconductorwith the Fermi level positioned in the middle of the band gap, but alsoto a semiconductor in which the concentration of an impurity forimparting p-type or n-type conductivity is 1×10¹⁸ atoms/cm⁻³ or less,and in which the photoconductivity is higher than the dark conductivity.

Further, in the case where a silicon semiconductor layer having p-typeconductivity is used as each of the first silicon semiconductor layer201 and the second silicon semiconductor layer 202, a p⁻-type siliconsemiconductor layer is preferably used. In the case where a p⁻-typesilicon semiconductor layer is used, the semiconductor layer has a darkconductivity of 1×10⁻¹⁰ S/cm to 1×10⁻⁵ S/cm, preferably 1×10⁻⁹ S/cm to1×10⁻⁶ S/cm, more preferably 1×10⁻⁹ S/cm to 1×10⁻⁷ S/cm.

In this embodiment, the silicon substrate 200 has n-type conductivityand the oxide semiconductor layer 210 has p-type conductivity. Thus, ap-n junction is formed between the silicon substrate 200 and the oxidesemiconductor layer 210 with the first silicon semiconductor layer 201provided therebetween.

Further, the third silicon semiconductor layer 203 provided on the backsurface of the silicon substrate 200 has the same conductivity type asthe silicon substrate 200 and has a higher carrier concentration thanthe silicon substrate 200. Accordingly, an n-n⁺ junction is formedbetween the silicon substrate 200 and the third silicon semiconductorlayer 203 with the second silicon semiconductor layer 202 providedtherebetween. That is, the third silicon semiconductor layer 203 servesas a BSF layer. When the BSF layer is provided, recombination ofminority carriers in the vicinity of the second electrode 290 can beprevented by the potential barrier due to band bending of the n-n⁺junction.

Note that a light-transmitting conductive film having n-typeconductivity may be used as an alternative to the third siliconsemiconductor layer 203. For the light-transmitting conductive film, thefollowing can be used: indium tin oxide; indium tin oxide containingsilicon; indium oxide containing zinc; zinc oxide; zinc oxide containinggallium; zinc oxide containing aluminum; tin oxide; tin oxide containingfluorine; tin oxide containing antimony; graphene, or the like. Theabove light-transmitting conductive film is not limited to a singlelayer, and a stacked structure of different films may be employed. Thelight-transmitting conductive film serves not only as an electric fieldforming layer but also as a film for promoting reflection of lightreaching the second electrode 290.

Next, a method for manufacturing the photoelectric conversion deviceshown in FIG. 10 is described with reference to FIGS. 14A to 14C andFIGS. 15A to 15C.

A single crystal silicon substrate or a polycrystalline siliconsubstrate can be used for the silicon substrate 200 that can be used inone embodiment of the present invention. A method for manufacturing thecrystalline silicon substrate is not specifically limited. In thisembodiment, described is an example in which an n-type single crystalsilicon substrate whose surface corresponds to the (100) plane and whichis manufactured by a Magnetic Czochralski (MCZ) method is used.

Next, the front surface and the back surface of the silicon substrate200 are processed to have a texture structure (see FIG. 14A). For amethod for processing the silicon substrate 200 to have unevenness, thedescription of the step of processing the silicon substrate 100 to haveunevenness in Embodiment 2, which is illustrated in FIG. 8A, can bereferred to.

Next, after appropriate cleaning, the second silicon semiconductor layer202 is formed over the back surface of the silicon substrate 200 whichis opposite to the light-receiving surface by a plasma CVD method. Thethickness of the second silicon semiconductor layer 202 is preferablygreater than or equal to 3 nm and less than or equal to 50 nm. In thisembodiment, the second silicon semiconductor layer 202 is i-typeamorphous silicon, which has a thickness of 5 nm. Note thatmicrocrystalline silicon may be used for the second siliconsemiconductor layer 202. The conductivity type of the second siliconsemiconductor layer 202 is not limited to an i-type and may be ann⁻-type.

The second silicon semiconductor layer 202 can be formed, for example,under the following conditions: monosilane is introduced to a reactionchamber at a flow rate of greater than or equal to 5 sccm and less thanor equal to 200 sccm; the pressure inside the reaction chamber is set tohigher than or equal to 100 Pa and lower than or equal to 200 Pa; thedistance between electrodes is set to greater than or equal to 10 mm andless than or equal to 40 mm; the power density based on the area of acathode electrode is set to greater than or equal to 8 mW/cm² and lessthan or equal to 120 mW/cm²; and the substrate temperature is set tohigher than or equal to 150° C. and lower than or equal to 300° C.

Next, the third silicon semiconductor layer 203 is formed over thesecond silicon semiconductor layer 202 (see FIG. 14B). The third siliconsemiconductor layer 203 preferably has a thickness of greater than orequal to 3 nm and less than or equal to 50 nm. In this embodiment, thethird silicon semiconductor layer 203 is formed using n⁺-typemicrocrystalline silicon or amorphous silicon, and has a thickness of 10nm.

The third silicon semiconductor layer 203 can be formed, for example,under the following conditions: monosilane and hydrogen-based phosphine(0.5%) are introduced to a reaction chamber at a flow rate ratio of 1:1to 15; the pressure inside the reaction chamber is set to higher than orequal to 100 Pa and lower than or equal to 200 Pa; the distance betweenelectrodes is set to greater than or equal to 10 mm and less than orequal to 40 mm; the power density based on the area of a cathodeelectrode is set to greater than or equal to 8 mW/cm² and less than orequal to 120 mW/cm²; and the substrate temperature is set to higher thanor equal to 150° C. and lower than or equal to 300° C.

Next, the first silicon semiconductor layer 201 is formed over thesurface of the silicon substrate 200 on the light-receiving surface sideby a plasma CVD method (see FIG. 14C). The thickness of the firstsilicon semiconductor layer 201 is preferably greater than or equal to 3nm and less than or equal to 50 nm. In this embodiment, the firstsilicon semiconductor layer 201 is i-type amorphous silicon and has athickness of 5 nm. Note that microcrystalline silicon may be used forthe first silicon semiconductor layer 201. The conductivity type of thefirst silicon semiconductor layer 201 is not limited to i-type and maybe p⁻-type. Note that the first silicon semiconductor layer 201 can beformed under conditions similar to those of the third siliconsemiconductor layer 203.

Note that in the case where the first silicon semiconductor layer 201 isa p⁻-type silicon semiconductor layer, the first silicon semiconductorlayer 201 can be formed, for example, under the following conditions:monosilane and hydrogen-based diborane (0.1%) are introduced to areaction chamber at a flow rate ratio of 1:0.01 to 1 (greater than orequal to 0.01 and less than 1); the pressure inside the reaction chamberis set to higher than or equal to 100 Pa and lower than or equal to 200Pa; the distance between electrodes is set to greater than or equal to10 mm and less than or equal to 40 mm; the power density based on thearea of a cathode electrode is set to greater than or equal to 8 mW/cm²and less than or equal to 120 mW/cm²; and the substrate temperature isset to higher than or equal to 150° C. and lower than or equal to 300°C.

Note that in this embodiment, although an RF power source with afrequency of 13.56 MHz is used as a power source for forming the firstsilicon semiconductor layer 201, the second silicon semiconductor layer202, and the third silicon semiconductor layer 203, an RF power sourcewith a frequency of 27.12 MHz, 60 MHz, or 100 MHz may be used instead.In addition, the deposition may be carried out by not only continuousdischarge but also pulse discharge. The implementation of pulsedischarge can improve the film quality and reduce particles produced inthe gas phase.

Next, the oxide semiconductor layer 210 is formed over the first siliconsemiconductor layer 201 (see FIG. 15A). For a method for forming theoxide semiconductor layer 210, the description of the step of formingthe oxide semiconductor layer 110 in Embodiment 2, which is illustratedin FIG. 9A, can be referred to. In this embodiment, the oxidesemiconductor layer 210 is formed using a molybdenum oxide film havingp-type conductivity and has a thickness of 1 nm to 100 nm. Note that theoxide semiconductor layer 210 is formed so as to have a higher carrierconcentration than the first silicon semiconductor layer 201.

Next, the light-transmitting conductive film 250 is formed over theoxide semiconductor layer 210 (see FIG. 15B). Here, the thickness of thelight-transmitting conductive film 250 is preferably greater than orequal to 10 nm and less than or equal to 1000 nm. For a method forforming the light-transmitting conductive film 250, the description ofthe step of forming the light-transmitting conductive film 150 inEmbodiment 2, which is illustrated in FIG. 9B, can be referred to. Forexample, the light-transmitting conductive film 250 is formed usingindium tin oxide and has a thickness of 70 nm so as to reduce opticalreflectance.

Note that the formation order of the films provided on the front surfaceand the back surface of the silicon substrate 200 is not limited to theorder described above as long as the structure illustrated in FIG. 15Bcan be obtained. For example, the second silicon semiconductor layer 202may be formed, and then the first silicon semiconductor layer 201 may beformed.

Next, the second electrode 290 is formed over the third siliconsemiconductor layer 203. The second electrode 290 can be formed using alow-resistance metal such as silver, aluminum, or copper by a sputteringmethod, a vacuum evaporation method, or the like. Alternatively, ascreen printing method may be used to form the second electrode 290 froma conductive resin such as a silver paste or a copper paste.

Next, the first electrode 270 is formed over the light-transmittingconductive film 250 (see FIG. 15C). The first electrode 270 is a gridelectrode and is preferably formed using a conductive resin such as asilver paste, a copper paste, a nickel paste, or a molybdenum paste by ascreen printing method. Further, the first electrode 270 may be astacked layer of different materials, such as a stacked layer of asilver paste and a copper paste.

Note that in order to form a photoelectric conversion device having thestructure illustrated in FIG. 11, before a process for formingunevenness, a resist mask or the like may be provided on a surface wherethe unevenness is not formed.

Further, in order to form a photoelectric conversion device having thestructure illustrated in FIG. 12, in the step of FIG. 15B, thelight-transmitting conductive film 280 may be formed over the thirdsilicon semiconductor layer 203, and after that, as grid electrodes, thefirst electrode 270 and the second electrode 290 may be provided overthe light-transmitting conductive film 250 and the light-transmittingconductive film 280, respectively.

Further, in order to form a photoelectric conversion device having thestructure illustrated in FIG. 13, a structure in which the first siliconsemiconductor layer 201 is not provided in the step of FIG. 14C may beemployed.

In the above manner, the photoelectric conversion device in which theoxide semiconductor layer is used as a window layer, which is oneembodiment of the present invention, can be manufactured.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 4

In this embodiment, photoelectric conversion devices whose structuresare different from the structures of the photoelectric conversiondevices in Embodiments 2 and 3 is described with reference to FIGS. 16Aand 16B, FIGS. 17A and 17B, and FIGS. 18A and 18C. Note that detaileddescription of portions which are similar to those of Embodiments 2 and3 is omitted in this embodiment.

FIG. 16A is a schematic cross-sectional view illustrating an example ofa photoelectric conversion device. The photoelectric conversion deviceincludes a silicon substrate 300, and further includes, over one surfaceof the silicon substrate 300, a silicon oxide layer 311, an oxidesemiconductor layer 310 over the surface of the silicon substrate 300with the silicon oxide layer 311 provided therebetween, alight-transmitting conductive film 350 over the oxide semiconductorlayer 310, and a first electrode 370 in contact with thelight-transmitting conductive film 350. Furthermore, the photoelectricconversion device includes, over the other surface of the siliconsubstrate 300, an impurity region 330, and a second electrode 390 incontact with the impurity region 330. Note that the first electrode 370is a grid electrode, and the surface on the first electrode 370 sideserves as a light-receiving surface.

For the oxide semiconductor layer 310, an oxide semiconductor which hasp-type conductivity and contains molybdenum oxide (MoO_(y) (2<y<3))having an intermediate composition between molybdenum dioxide andmolybdenum trioxide, which is described in other embodiments, can beused. For example, molybdenum oxide containing molybdenum trioxide(MoO₃) and molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide is used.Molybdenum oxide is preferable since it is stable in the air, has a lowhygroscopic property, and is easily treated.

In this embodiment, a silicon substrate having n-type conductivity isused as the silicon substrate 300. Further, as described above, theoxide semiconductor layer 310 has p-type conductivity. Thus, a p-njunction with a semiconductor-insulator-semiconductor (SIS) structure isformed between the silicon substrate 300 and the oxide semiconductorlayer 310.

The light-transmitting conductive film 350 is preferably formed over theoxide semiconductor layer 310. By the provision of thelight-transmitting conductive film 350, resistance loss between theoxide semiconductor layer 310 and the first electrode 370 can bereduced. However, in the case where the resistance of the oxidesemiconductor layer 310 is sufficiently low or in the case where themanufactured photoelectric conversion device is used for low-currentapplications which are not affected by the loss of current due to itsresistance, a structure in which the light-transmitting conductive film350 is not provided may be employed.

The same material as the light-transmitting conductive film 150described in Embodiment 1 can be used for the light-transmittingconductive film 350.

The impurity region 330 is a BSF layer, has the same conductivity typeas the silicon substrate 300, and is a region having a higher carrierconcentration than the silicon substrate 300. By the provision of theBSF layer, an n-n⁺ junction is formed and recombination of minoritycarriers in the vicinity of the second electrode 390 can be prevented bythe potential barrier due to band bending.

Further, as shown in FIG. 16B, a texture structure in which the siliconsubstrate 300 is processed to have unevenness may be employed. Thetexture structure provided for the light-receiving surface side canreduce reflection loss at the surface because incident light isreflected in a multiple manner. Further, by the texture structure, lightenters a photoelectric conversion region obliquely by the refractiveindexes of the silicon substrate in the photoelectric conversion region.Thus, the optical path length is increased and reflection between thefront surface and the back surface of the photoelectric conversionregion is repeated, whereby light trapping effect can occur. The texturestructure may be provided for both surfaces as shown in FIG. 16B, oreither the front surface or the back surface of the silicon substrate.

For the silicon oxide layer 311, silicon dioxide (SiO₂), siliconmonoxide (SiO), silicon oxide (SiO_(x) (x>0)) such as silicon oxide inwhich silicon dioxide and silicon are mixed, and a compound of silicon,oxygen, and a metal contained in the oxide semiconductor layer 310 canbe used. The silicon oxide layer 311 can be obtained by oxidation ordeposition using an electric furnace, a plasma CVD apparatus, a plasmatreatment apparatus, or the like. Alternatively, the silicon oxide layer311 may be formed in such a manner that the silicon substrate 300 andthe oxide semiconductor layer 310 are reacted with each other usingheat, infrared rays, energy in forming the oxide semiconductor layer310, or the like. Note that the silicon oxide layer 311 may have aresistance which is the same level as a semiconductor.

The thickness of the silicon oxide layer 311 can be 0.5 nm to 10 nm.Since the silicon oxide layer 311 is formed in a p-n junction formedbetween the silicon substrate 300 and the oxide semiconductor layer 310,the silicon oxide layer 311 is preferably an extremely thin film throughwhich tunnel current flows. Further, the silicon oxide layer 311function as a buffer layer to relax lattice mismatch in junction betweenthe silicon substrate 300 and the oxide semiconductor layer 310.

FIGS. 17A and 17B are schematic views of energy band structures alongA-B direction in FIG. 16A. Here, as an example, single crystal siliconhaving n-type conductivity is used as the silicon substrate 300,molybdenum oxide containing MoO₃ and MoO_(y) (2<y<3) and having p-typeconductivity is used as the oxide semiconductor layer 310, silicon oxide(SiO_(x) (x>0)) is used as the silicon oxide layer 311, and n⁺-typesingle crystal silicon to which phosphorus is added at highconcentration as an impurity is used as the impurity region 330. InFIGS. 17A and 17B, an energy level 312 in the band gap of the oxidesemiconductor layer 310 is similar to the gap level detected as the peak112 in XPS spectra in FIG. 2.

As shown in FIG. 17A, the silicon oxide layer 311 is formed in a p-njunction between the p-type oxide semiconductor layer 310 and the n-typesilicon substrate 300, so that a potential barrier is formed on theconduction band side to which electrons are transferred and on thevalence band side to which holes are transferred. The potential barrieron the conduction band for electrons that are majority carriers in then-type silicon substrate 300 is a potential barrier by band bending in adepletion region of the n-type silicon substrate 300, which can reducediffusion current or thermal release current as a diode in the p-njunction and improve output voltage of the photoelectric conversiondevice.

On the other hand, in FIG. 17A, the potential barrier on the valenceband side for holes that are minority carrier in the n-type siliconsubstrate 300 due to the silicon oxide layer 311 can be a potentialbarrier when electron-hole pairs excited by light absorption in then-type silicon substrate 300 that is a photo conversion layer are formedand then the holes are transferred, thereby preventing entry ofphotocurrent. However, the silicon oxide layer 311 is formed with enextremely thin film; thus, a tunnel current or a leak current can begenerated. Accordingly, even with the potential barrier on theconduction band due to the silicon oxide layer 311 exists, whenelectron-hole pairs excited by light absorption in the n-type siliconsubstrate 300 that is a photo conversion layer are formed, the holes canflow into the potential barrier by the tunnel current or the leakcurrent and can be extracted as a current. Furthermore, in the casewhere a tunnel current flowing through the potential barrier of thesilicon oxide layer 311 is a device operation mechanism, a decrease inthe output due to a temperature rise of the photoelectric conversiondevice in accordance with solar radiation and an air temperature risecan be reduced since the tunnel current has little dependence ontemperature.

By the energy level 312 in the energy band gap of the oxidesemiconductor layer 310, current in which holes are carriers can flow.Further, the energy level 312 acts as an energy band as the valence bandof the oxide semiconductor layer 310, thereby imparting p-typeconductivity.

Further, FIG. 17B is a band diagram in which the silicon oxide layer 311is formed using silicon oxide (SiO_(x) (x>0)). As shown in the figure,an energy level is formed in the band gap of the silicon oxide layer311; thus, current can be easily extracted.

Next, methods for manufacturing the photoelectric conversion devicesshown in FIGS. 16A and 16B are described. The photoelectric conversiondevices shown in FIGS. 16A and 16B are formed as described in Embodiment2 with reference to FIGS. 8A to 8C and FIGS. 9A to 9C and then thesilicon oxide layer 311 may be formed before or at the same time as theformation of the oxide semiconductor layer 110 described in FIG. 8C.Alternatively, after the formation of the oxide semiconductor layer 110described in FIG. 8C, the silicon oxide layer 311 may be formed by areaction caused at an interface between the oxide semiconductor layer110 and the silicon substrate 100.

Further, the photoelectric conversion device of one embodiment of thepresent invention may have a structure illustrated in FIG. 18A or 18B.The photoelectric conversion devices shown in FIGS. 18A and 18B eachincludes a silicon substrate 300, and further includes, over one surfaceof the silicon substrate 300, a silicon oxide layer 311, an oxidesemiconductor layer 310 over the silicon oxide layer 311, alight-transmitting conductive film 350 over the oxide semiconductorlayer 310, and a first electrode 370 in contact with thelight-transmitting conductive film 350. Furthermore, the photoelectricconversion device includes, over the other surface of the siliconsubstrate 300, an impurity region 330 having the same conductivity asthe silicon substrate 300, a passivation layer 380, and a secondelectrode 390 in contact with the impurity region 330.

For the passivation layer 380, silicon oxide, silicon nitride, siliconnitride oxide (SiN_(x)O_(y) (x>y>0)), silicon oxynitride (SiO_(x)N_(y)(x>y>0)), aluminum oxide, or the like can be used. The provision of thepassivation layer 380 enables recombination of minority carriers at theother surface side of the silicon substrate 300 to be reduced, so thatoutput voltage of the photoelectric conversion device in powergeneration can be improved. Further, by the use of a material having alower refractive index than the silicon substrate 300 for thepassivation layer 380, reflectance at the back surface of the siliconsubstrate 300 can be increased and output current of the photoelectricconversion device in power generation can be improved.

The impurity region 330 may be provided on the entire back surface ofthe silicon substrate as shown in FIG. 18A; alternatively the impurityregion 330 may be provided only in the vicinity of the openings in thepassivation layer 380 as shown in FIG. 18B. By the provision of theimpurity region 330, the minority carrier density can be reduced but thesurface recombination rate at the interface between the impurity region330 and the passivation layer 380 is increased; that is, there is atrade-off therebetween. Therefore, in consideration of the surfacerecombination rate at the interface between the impurity region 330 andthe passivation layer 380 depending on the manufacturing process, apractitioner can determine the structure so that more favorable electriccharacteristics can be obtained.

Note that the photoelectric conversion device may have a structure inwhich structures of FIGS. 16A and 16B and FIGS. 18A and 18B are combinedas appropriate.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 5

In this embodiment, photoelectric conversion devices whose structuresare different from the structures of the photoelectric conversiondevices in Embodiments 2 to 4 is described with reference to FIGS. 19Aand 19B and FIGS. 20A and 20B. Note that detailed description ofportions which are similar to those of Embodiments 2 to 4 is omitted inthis embodiment.

FIGS. 19A and 19B are cross-sectional views each showing a photoelectricconversion device of one embodiment of the present invention. Thephotoelectric conversion device includes a silicon substrate 400, andfurther includes, over one surface of the silicon substrate 400, asilicon oxide layer 411, an oxide semiconductor layer 410 formed overthe surface of the silicon substrate 400 with the silicon oxide layer411 provided therebetween, a light-transmitting conductive film 450, anda first electrode 470. Furthermore, the photoelectric conversion deviceincludes, over the other surface of the silicon substrate 400, a firstsilicon semiconductor layer 402, a second silicon semiconductor layer403, and a second electrode 490. Note that the first electrode 470 is agrid electrode, and the surface on the first electrode 470 side servesas a light-receiving surface.

Further, FIG. 19B shows an example of a texture structure in which thefront surface and the back surface of the silicon substrate 400 areprocessed to have unevenness. On the surface processed to haveunevenness, incident light is reflected in a multiple manner, and thelight travels obliquely into a photoelectric conversion region; thus,the optical pass length is increased. In addition, a so-called lighttrapping effect in which light reflected by the back surface is totallyreflected by the surface can occur. The texture structure may beprovided for both surfaces or either the front surface or the backsurface of the silicon substrate 400.

For the oxide semiconductor layer 410 in one embodiment of the presentinvention, an oxide semiconductor containing molybdenum oxide (MoO_(y)(2<y<3)) having an intermediate composition between molybdenum dioxideand molybdenum trioxide, which is described in the other embodiments,can be used.

The silicon oxide layer 411 can be formed using the same material as thesilicon oxide layer 311 described in Embodiment 4. The thickness of thesilicon oxide layer 411 is preferably 0.5 nm to 10 nm, more preferably0.5 nm to 5 nm. Since the silicon oxide layer 411 is formed in a p-njunction, the oxide layer is preferably an extremely thin film throughwhich tunnel current flows. Further, the silicon oxide layer 411function as a buffer layer to relax lattice mismatch in junction betweenthe silicon substrate 400 and the oxide semiconductor layer 410.

The first silicon semiconductor layer 402 and the second siliconsemiconductor layer 403 can be formed using the same materials as thefirst silicon semiconductor layer 302 and the second siliconsemiconductor layer 303, respectively, which are described in Embodiment3. For example, an i-type silicon semiconductor layer, or a siliconsemiconductor layer having a conductivity type opposite to the siliconsubstrate 400 may be used.

In conventional photoelectric conversion devices, a window layer isformed using a silicon material; therefore, the light absorption in thewindow layer is a heavy loss. In one embodiment of the presentinvention, a light-transmitting metal oxide is used for a window layerof a photoelectric conversion device, whereby the light loss caused bylight absorption in the window layer is reduced, and photoelectricconversion can be efficiently performed in a light absorption region.

Further, the photoelectric conversion device of one embodiment of thepresent invention may have a structure illustrated in FIG. 20A or 20B.The photoelectric conversion devices shown in FIGS. 20A and 20B eachinclude the silicon substrate 400, and further includes, over onesurface of the silicon substrate 400, a third silicon semiconductorlayer 401, the silicon oxide layer 411 over the third siliconsemiconductor layer 401, the oxide semiconductor layer 410 over thesilicon oxide layer 411, the light-transmitting conductive film 450, andthe first electrode 470. Furthermore, the photoelectric conversiondevice includes, over the other surface of the silicon substrate 400,the first silicon semiconductor layer 402, the second siliconsemiconductor layer 403, and the second electrode 490. Note that thefirst electrode 470 is a grid electrode, and the surface on the firstelectrode 470 side serves as a light-receiving surface.

The third silicon semiconductor layer 401 can be formed using asemiconductor layer containing hydrogen and few defects, which issimilar to the first silicon semiconductor layer 201 described inEmbodiment 3, so that defects on the surface of the silicon substrate400 can be terminated. The semiconductor layer is preferably formedusing an amorphous silicon semiconductor.

The photoelectric conversion device shown in FIG. 19B can be formed asdescribed in Embodiment 4 with reference to FIGS. 17A and 17B and FIGS.18A and 18B. The silicon oxide layer 411 may be provided instead of thefirst silicon semiconductor layer 201 in FIG. 17C.

The photoelectric conversion device shown in FIG. 20B is formed asdescribed in Embodiment 4 with reference to FIGS. 17A and 17B and FIGS.18A and 18B. Before or at the same time as the formation of the oxidesemiconductor layer 210 described in FIG. 18C, the silicon oxide layer411 may be formed. Alternatively, the silicon oxide layer 411 may beformed by a reaction caused at the interface between the oxidesemiconductor layer 410 and the silicon substrate 400 after theformation of the oxide semiconductor layer 410.

Note that the photoelectric conversion device may have a structure inwhich structures shown in FIGS. 19A and 19B and FIGS. 20A and 20B arecombined as appropriate.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 6

In this embodiment, photoelectric conversion devices whose structuresare different from the structures of the photoelectric conversiondevices in Embodiments 2 to 5 is described with reference to FIGS. 21Aand 21B and FIGS. 22A and 22B. Note that detailed description ofportions which are similar to those of Embodiments 2 to 5 is omitted inthis embodiment.

FIG. 21A is a cross-sectional view of a photoelectric conversion devicethat is one embodiment of the present invention. The photoelectricconversion device includes a silicon substrate 500, and furtherincludes, over one surface of the silicon substrate, an oxidesemiconductor layer 510 and a light-transmitting thin film 551.Furthermore, the photoelectric conversion device includes, over theother surface of the silicon substrate 500, a first impurity region 520,a second impurity region 530, a first electrode 570 and a secondelectrode 590. In other words, the photoelectric conversion device has aback contact structure in which the electrodes and the impurity regionsare provided only over the back surface of the silicon substrate. Notethat the silicon substrate 500 may have either p-type conductivity orn-type conductivity. Further, the light-transmitting thin film 551serves as an anti-reflection film and may be provided as necessary.

The oxide semiconductor layer 510 provided over the surface of thesilicon substrate 500 can have a passivation effect of suppressingrecombination of carriers by band bending in the vicinity where theoxide semiconductor layer 510 is connected to the silicon substrate 500or by the potential barrier of the oxide semiconductor layer 510 itself.Further, as shown in FIG. 21B, a silicon oxide film layer 511 may beformed by a reaction caused at an interface between the oxidesemiconductor layer 510 and the silicon substrate 500. The silicon oxidefilm layer 511 is interposed at the interface between the oxidesemiconductor layer 510 and the silicon substrate 500, whereby a higherpotential barrier is formed, so that a higher passivation effect can beobtained. Accordingly, the oxide semiconductor layer 510 can be used asa passivation film on the surface side of the photoelectric conversiondevice having a back contact structure.

The light-transmitting thin film 551 can be a single layer or a stackedlayer of a silicon oxide film, a silicon nitride film, a silicon nitrideoxide (SiN_(x)O_(y) (x>y>0)) film, a silicon oxynitride (SiO_(x)N_(y)(x>y>0)) film, a titanium oxide film, a zinc sulfide film, or amagnesium fluoride film. The light-transmitting thin film 551 is formedso as to serve as an anti-reflection film and thus is formed so as toreduce optical reflectance.

The photoelectric conversion device shown in FIG. 22A includes thesilicon substrate 500 having one conductivity type, and furtherincludes, over one surface of the silicon substrate 500, the oxidesemiconductor layer 510 having a conductivity type opposite to that ofthe silicon substrate 500, and the light-transmitting thin film 551 overthe oxide semiconductor layer 510. Furthermore, the photoelectricconversion device includes, over the other surface of the siliconsubstrate 500, an impurity region 540 having the same conductivity typeas the silicon substrate 500 and having a higher carrier concentrationthan the silicon substrate 500, a passivation layer 560 provided on awall surface of an opening penetrating the silicon substrate 500, thefirst electrode 570 in contact with the oxide semiconductor layer 510through the opening penetrating the silicon substrate 500, and thesecond electrode 590 in contact with the impurity region 540.

In the structures shown in FIGS. 22A and 22B, the oxide semiconductorlayer 510 has a passivation effect of suppressing recombination ofcarriers at the surface of the silicon substrate 500 as in thestructures shown in FIGS. 21A and 21B, and also has a function as abonding layer which forms a bond with the silicon substrate 500.Further, the silicon oxide film layer 511 may be formed by a reactioncaused at an interface between the oxide semiconductor layer 510 and thesilicon substrate 500.

Note that the photoelectric conversion device may have a structure inwhich structures shown in FIGS. 21A and 21B and FIGS. 22A and 22B arecombined as appropriate.

This embodiment can be freely combined with any of the other embodimentsand an example.

Embodiment 7

In this embodiment, a photoelectric conversion device that is oneembodiment of the present invention and a manufacturing method thereofis described.

The photoelectric conversion devices shown in FIGS. 16A and 16Bdescribed in Embodiment 4, as shown in the band diagram (see FIG. 23),has a p-n junction between the n-type silicon substrate 300 and themolybdenum oxide film that is the oxide semiconductor layer 310 having ahigher work function than the silicon substrate 300 and having p-typeconductivity. Further, a potential barrier is formed by band bending onthe conduction side to which electrons are transferred. Furthermore, bythe provision of the silicon oxide layer 311 in the p-n junction,potential barriers are formed on the conduction side to which electronsare transferred and the valence band to which holes are transferred. Thesilicon oxide layer 311 serves as a buffer layer to reduce latticemismatch in bonding between the silicon substrate 300 and the oxidesemiconductor layer 310. Since the potential barrier occurs on thevalence band side from which hole current of the photocurrent isextracted, it is preferable that the silicon oxide layer 311 beextremely thin film for tunneling current conduction or have aconductivity level as a semiconductor with low insulating properties.When the silicon oxide layer 311 has low insulating properties, manyenergy levels 313 are formed in the band gap as shown in the figure;thus, photocurrent can be easily extracted by the conduction through theenergy levels.

The energy level 312 in the energy band gap of the molybdenum oxide filmcan transfer holes. Further, the energy level 312 acts as an energy bandas the valence band of the oxide semiconductor layer 110; therefore, themolybdenum oxide film can have p-type conductivity.

Further, ionization potential of a molybdenum oxide film containingmolybdenum trioxide (MoO₃) and molybdenum oxide MoO_(y) (2<y<3)) havingan intermediate composition of molybdenum dioxide and molybdenumtrioxide at about 10% of the total composition is about 6.4 eV, and thework function is about 5.7 eV to 6.1 eV. Thus, as described above, ahigh potential barrier 301 a can be formed on the conduction band side.The potential barrier 301 a in an equilibrium state in the case wheremolybdenum oxide having the above-described structure and an n-typesilicon substrate with an electric resistance of about 1 Ω·cm are usedis about 1.4 eV to 1.8 eV, and an effective barrier height consideringthe maximum depletion layer capacity is approximately 0.66 eV.Accordingly, a thermal release current 302 a due to electrons, whichbecome a component of diode current as shown in FIG. 24 is not likely toflow. On the other hand, the potential barrier 301 b on the valence bandside is approximately 0.19 eV to 0.59 eV; that is, a diffusion current302 b due to holes is likely to flow.

In general, the control of the diode current enables a high open-circuitvoltage (Voc) to be obtained theoretically. The relation between thediode current and the open voltage (Voc) can be simply represented bythe following Formula 1. Here, k, T, q, I_(L), and I_(do) represent aBoltzmann's constant, a temperature, an elementary charge, aphotocurrent, and a saturation current (or also referred to as basiccurrent) in diode current, respectively.

$\begin{matrix}{{Voc} = {\frac{kT}{q}{\ln \left( {1 + {\frac{I_{L}}{I_{d\; 0}}}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 1} \right\rbrack\end{matrix}$

In the photoelectric conversion devices having the structures shown inFIGS. 16A and 16B, the diffusion current due to holes, which is acomponent of the diode current, is large and thus it is an object tosuppress the diffusion current due to holes to increase the open-circuitvoltage.

FIG. 25A is a cross-sectional view of a photoelectric conversion devicethat is one embodiment of the present invention. The photoelectricconversion device includes an n-type silicon substrate 600, and furtherincludes, over one surface of the silicon substrate 600, a silicon oxidelayer 611, an oxide semiconductor layer 610 having p-type conductivityover the silicon oxide layer 611, a light-transmitting conductive film650 on the oxide semiconductor layer 610, and a first electrode 670 onthe light-transmitting conductive film 650. Furthermore, thephotoelectric conversion device includes, over the other surface of thesilicon substrate 600, a second electrode 691. Note that the firstelectrode 670 is a grid electrode, and a surface on the first electrode670 side serves as a light-receiving surface. Note that the siliconoxide layer 611 is not necessarily provided.

The photoelectric conversion device shown in FIG. 25A does not have animpurity region which the photoelectric conversion devices in FIGS. 16Aand 16B have as a BSF layer. The material of the second electrode 390 ofthe photoelectric conversion devices in FIGS. 16A and 16B is differentfrom that of the second electrode 691 of the photoelectric conversiondevice in FIG. 25A. Except for the above, the photoelectric conversiondevice in FIG. 25A can be the same as either of the photoelectricconversion devices in FIGS. 16A and 16B.

A material having a lower work function than silicon can be used for thesecond electrode 691. Further, the work function of the second electrode691 is preferably 4.6 eV or lower, more preferably 4.2 eV or lower. Thesecond electrode preferably contains one or more conductor orsemiconductor materials selected from Mg, MgO, MgAg, MgIn, AlLi, BaO,SrO, CaO, GdB, YB₆, LaB₆, Y, Hf, Nd, La, Ce, Sm, Ca and Gd.Alternatively, the second electrode 691 may have a structure in whichthe one or more conductor or semiconductor material is stacked with alow-resistance material such as Al or Ag. In addition, examples of thematerial with low work function include K, Rb, Sr, Ba, Eu, Lu, Th, U,and the like.

By the use of such a material for the second electrode 691, the bandstructure shown in FIG. 26 can be obtained. Other than the potentialbarriers 601 a and 601 b formed at the interfaces with the silicon oxidelayer 611, a potential barrier 601 c for holes can be formed also at theinterface with the second electrode 691. Thus, high potential barrierswith respect to holes due to the potential barriers 601 b and 601 c canbe obtained. Thus, the diffusion current 602 b due to holes can besuppressed as shown in FIG. 27. That is, diode current corresponding tothe sum of the thermal diffusion current 602 a due to electrons and thediffusion current 602 b due to holes can be suppressed, and a highopen-circuit voltage can be obtained. Note that the potential barrier601 c for holes is a potential barrier formed by band bending in adirection where extraction of photocurrent flowing in the reversedirection to the diode current as a current in the first electrode 670and the second electrode 691 is not hindered. Further, the energy levels612 and 613 shown in FIG. 26 correspond to the energy levels 312 and 313shown in FIG. 23.

As shown in FIGS. 33A and 33B, a semiconductor region 692 that has alower work function than silicon may be formed between the secondelectrode 691 and the silicon substrate 600. The work function of thesemiconductor region 692 is preferably 4.6 eV or less, more preferably4.2 eV or less. For example, the semiconductor region 692 can be formedusing at least one of semiconductor materials selected from MgO, BaO,SrO, CaO, and the like. At this time, the second electrode 691 ispreferably formed using a conductor of a low work function material asdescribed above; however, the second electrode 691 is not necessarilyformed using a low work function material and may be a low resistancemetal such as Al or Ag.

The diffusion current (I_(d, p)) due to holes in a general diode likethe photoelectric conversion devices in FIGS. 16A and 16B, istheoretically indicated by the following Formulae 2 and 3.

$\begin{matrix}{I_{d,p} = {I_{{d\; 0},p}\left( {{\exp \left\lbrack {{qV}/{kT}} \right\rbrack} - 1} \right)}} & \left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack \\{I_{{d\; 0},{p\; 2}} = {{qA}\frac{D_{p}}{L_{p}}p_{n\; 0}\frac{{\exp \left( {W_{n}/L_{p}} \right)} + {\exp \left( {{- W_{n}}/L_{p}} \right)}}{{\exp \left( {W_{n}/L_{p}} \right)} - {\exp \left( {{- W_{n}}/L_{p}} \right)}}}} & \left\lbrack {{Formula}\mspace{14mu} 3} \right\rbrack\end{matrix}$

Further, the diffusion current due to holes in the photoelectricconversion device shown in FIG. 25A is indicated by Formula 4.

$\begin{matrix}{I_{{d\; 0},{p\; 1}} = {{{qA}\frac{D_{p}}{L_{p}}p_{n\; 0}\frac{{\exp \left( {\left( {W_{n} - L_{B}} \right)/L_{p}} \right)} - {\exp \left( {{- \left( {W_{n} - L_{B}} \right)}/L_{p}} \right)}}{{\exp \left( {\left( {W_{n} - L_{B}} \right)/L_{p}} \right)} + {\exp \left( {{- \left( {W_{n} - L_{B}} \right)}/L_{p}} \right)}}} - \frac{2\left\{ {I_{n\rightarrow m}/\left( {{\exp \left\lbrack {{qV}/{kT}} \right\rbrack} - 1} \right)} \right\}}{{\exp \left( {\left( {W_{n} - L_{B}} \right)/L_{p}} \right)} + {\exp \left( {{- \left( {W_{n} - L_{B}} \right)}/L_{p}} \right)}}}} & \left\lbrack {{Formula}\mspace{14mu} 4} \right\rbrack\end{matrix}$

Here, I_(d, p) is a diffusion current due to holes; i_(d0,p) is asaturation current in the diffusion current due to holes; q is anelementary charge; A is an area; D_(p) is a hole diffusion coefficient;L_(p) is a hole diffusion length; P_(n0) is a hole density in an n-typesilicon substrate in equilibration time; W_(n) is a thickness of then-type silicon substrate; L_(B) is a back surface band bending width;I_(n→m) is a hole current passing through the valence band barrier atthe back surface of the silicon substrate; V is a potential differencebetween the oxide semiconductor layer and the silicon substrate; k is aBoltzmann's constant; and T is a temperature.

The Formula 4 can be derived by solving a current continuity equation onthe basis of a boundary condition in which the hole current 602 c (seeFIG. 27) crossing the hole barrier of the valence band on the backsurface side of the silicon substrate is set to I_(n→m).

It is not easy to obtain a correct solution of the I_(n→m) that is thehole current 602 c in the Formula 4; however, an approximate value canbe obtained. The I_(n→m) can be considered as the sum of amounts ofchanges of thermally released current I_(n→m) ^(Thermonic) due to holesthat are minority carrier of the n-type silicon substrate andtunnel-current I_(n→m) ^(Tunnel) which flows through the potentialbarrier of the valence band due to the back surface band bending eachfrom the state of equilibrium.

$\begin{matrix}{I_{n\rightarrow m} = {{\quad\left( {{I_{n\rightarrow m}^{Thermonic}\left( {{P_{n}(x)},V_{B}} \right)} - {I_{n\rightarrow m}^{Thermonic}\left( {P_{n\; 0},0} \right)}} \right)}_{x = {W_{n} - L_{B}}} + {\quad\left( {{I_{n\rightarrow m}^{Tunnel}\left( {{P_{n}(x)},V_{B}} \right)} - {I_{n\rightarrow m}^{Tunnel}\left( {P_{n\; 0},0} \right)}} \right)}_{x = {W_{n} - L_{B}}}}} & \left\lbrack {{Formula}\mspace{14mu} 5} \right\rbrack\end{matrix}$

The thermally released current I_(n→m) ^(Thermonic) (P_(n), V_(B)) dueto holes is obtained in such a manner that hole distribution in thevicinity of the back surface of the silicon substrate is obtained bymultiplying Maxwell-Bolzman rate distribution and a hole rate and thenthe obtained value is integrated by a rate higher than a hole rate whereholes can cross the hole barrier due to the back surface band bending,which is represented by Formula 6.

I _(n→m) ^(Thermonic)(P _(n) ,V _(B))=qAp _(n)(kT/2πm_(h)*)^(1/2)exp[−q(φ_(n-m) −V _(B))/kT]  [Formula 6]

The tunneling current I_(n→m) ^(Tunnel) (P_(n), V_(B)) due to holeswhich flows through the potential barrier of the valence band due to theback surface band bending can be obtained by multiplying thermalemission current due to holes by the probability that the holes flowsthrough the potential barrier of the valence band and integrating theformula, which is represented by Formula 7. It is difficult to obtainanalytic tunneling probability of the potential barrier of the valenceband that is bent by the back surface band bending; however, Formula 7that is an approximate solution of the tunneling probability can beobtained by calculation using Wentzel-Kramers-Brillouin approximationwhile bending of the band is considered as a triangular potentialapproximated by a linear function.

$\begin{matrix}{\quad{{I_{n\rightarrow m}^{Tunnel}\left( {P_{n},V_{B}} \right)} = {\quad{\frac{{qAp}_{n}}{\left( {2\; \pi \; m_{h}^{*}{kT}} \right)^{1/2}}{\exp\left\lbrack {{- \frac{4}{3}}\frac{L_{B}\sqrt{2\; m_{h}^{*}}}{\hslash \; {q\left( {\varphi_{n - m} - V_{B}} \right)}}} \right\rbrack} \times \left\lbrack {\frac{1}{kT} + {\frac{3}{2}\left\{ {q\left( {\varphi_{n - m} - V_{B}} \right)} \right\}^{1/2}}} \right\rbrack^{- 1}}}}} & \left\lbrack {{Formula}\mspace{14mu} 7} \right\rbrack\end{matrix}$

Here, I_(n→m) ^(Thermonic) (P_(n), V_(B)) is a thermally releasedcurrent due to holes which pass through the valence band barrier whenthe hole carrier density and the potential are P_(n) and V_(B),respectively; I_(n→m) ^(Tunnel) (P_(n), V_(B)) is a hole current thatflows through the valence band barrier when the hole carrier density andthe potential are P_(n) and V_(B), respectively; m_(h)* is holeeffective mass of the silicon substrate; V_(B) is a potential differencebetween the silicon substrate and the second electrode; φ_(n-m) is adifference in work functions between the silicon substrate and thesecond electrode; and x is a position in a film-thickness direction ofthe silicon substrate.

Note that the second term of the right side of Formula 4, which isdescribed above, is a term to decrease I_(d0, p1) and a magnituderelation of the Formula 8 is established; thus, it can be said that thefirst term of the right side of the Formula 4 exhibits a smaller currentvalue than I_(d0, p1) in Formula 3.

$\begin{matrix}{\frac{{\exp \left( {W_{n}/L_{p}} \right)} + {\exp \left( {{- W_{n}}/L_{p}} \right)}}{{\exp \left( {W_{n}/L_{p}} \right)} - {\exp \left( {{- W_{n}}/L_{p}} \right)}} \geq \frac{{\exp \left( {W_{n}/L_{p}} \right)} - {\exp \left( {{- W_{n}}/L_{p}} \right)}}{{\exp \left( {W_{n}/L_{p}} \right)} + {\exp \left( {{- W_{n}}/L_{p}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 8} \right\rbrack\end{matrix}$

Thus, the relation of I_(d0,p1)≦I_(d0,p2) where the saturation currentvalue in Formula 4 is smaller than that in Formula 3 can be established.Thus, by the use of the photoelectric conversion devices of embodimentsof the present invention in FIGS. 25A and 25B, the diffusion current dueto holes can be suppressed than in the cases of using the photoelectricconversion devices in FIGS. 16A and 16B. Further, as seen from Formula1, the open-circuit voltage can be improved.

In the photoelectric conversion device of one embodiment of the presentinvention, the open-circuit voltage can be improved by suppression ofthe diffusion current due to holes and generation of voltage not only atthe light-receiving surface but also at the other surface.

Further, the photoelectric conversion device of one embodiment of thepresent invention may have a structure shown in FIG. 25B. Thephotoelectric conversion device in FIG. 25B has a structure in which animpurity semiconductor region 660 is added to the structure of thephotoelectric conversion device in FIG. 25A. By the addition of theimpurity semiconductor region 660, the band bending width can beenlarged and potential barrier 601 c for holes can be enhanced, so thatthe diffusion current 602 b due to holes can be easily controlled.

Note that the impurity semiconductor region 660 may be a region with alower carrier concentration than the silicon substrate 600. The impuritysemiconductor region 660 can be formed by addition of an impurityimparting the conductivity type opposite to the silicon substrate 600,for example. Alternatively, the impurity semiconductor region 660 can beformed by formation of a silicon film having a lower carrierconcentration than the silicon substrate 600. It is desirable that thethickness of the impurity semiconductor region 660 be thinner than thewidth of the depletion layer due to band bending. It is preferable thatband bending occur over all the width of the impurity semiconductorregion 660 because extraction of photocurrent is not hindered.

Note that the impurity semiconductor region 660 may be a back surfacefield (BSF) layer, which has the same conductivity type as the siliconsubstrate 600 and has a higher carrier concentration than the siliconsubstrate 600. By the provision of the BSF layer, an n-n⁺ junction or ap-p⁺ junction is formed. Accordingly, a potential barrier due to bandbending can be formed. In addition, a potential barrier due to bandbending caused by the second electrode 691 formed of a material with alow work function is obtained and recombination of minority carriers inthe vicinity of the second electrode 691 can be obtained, so that thediffusion current due to holes can be suppressed.

Further, the photoelectric conversion device of one embodiment of thepresent invention may have any structures shown in FIGS. 28A, 28B and,28C. The photoelectric conversion device shown in FIGS. 28A, 28B and,28C each have the silicon substrate 600 having n-type conductivity, andfurther includes, over one surface of the silicon substrate 600, theoxide semiconductor layer 610 having p-type conductivity, thelight-transmitting conductive film 650 over the oxide semiconductorlayer 610, and the first electrode 670 over the light-transmittingconductive film 650. Furthermore, the photoelectric conversion deviceincludes, over the other surface of the silicon substrate 600, thepassivation layer 680, and the second electrode in contact with thesilicon substrate 600.

The passivation layer 680 can be formed of an insulating film such as asilicon oxide film, a silicon nitride film, a silicon nitride oxide(SiN_(x)O_(y) (x>y>0)) film, a silicon oxynitride (SiO_(x)N_(y) (x>y>0))film, or an aluminum oxide film. Provision of the passivation layer 680enables recombination of minority carriers on the back surface of thesilicon substrate 600 to be reduced, so that output voltage of thephotoelectric conversion device in power generation can be improved.Further, the use of a film formed of a material having a lowerrefractive index than the silicon substrate as the passivation layer680, reflectance at the back surface of the silicon substrate can beincreased. Thus, open-circuit voltage of the photoelectric conversiondevice as described above can be improved, and further output current inpower generation can also be improved.

The photoelectric conversion device shown in FIG. 28A has a structure inwhich the silicon substrate 600 is in contact with the second electrode691 in the openings in the passivation layer 680. Further, thephotoelectric conversion device shown in FIG. 28B has a structure inwhich the impurity semiconductor region 660 is provided only in thevicinity of the openings in the passivation layer 680, and the impuritysemiconductor region 660 is in contact with the second electrode 691 inthe openings. In the photoelectric conversion device with the structureshown in FIG. 28B, as in the case of the photoelectric conversion deviceshown in FIG. 25B, the diffusion current 602 b due to holes can beeasily controlled by the provision of the impurity semiconductor region660. Further, the photoelectric conversion device shown in FIG. 28C hasa structure in which the impurity semiconductor region 660 is providedfor the other surface of the silicon substrate 600, which is opposite tothe light-receiving surface and the impurity semiconductor region 660 isin contact with the second electrode 691 in the openings. In thephotoelectric conversion device with the structure shown in FIG. 28C, asin the case of the photoelectric conversion device in FIG. 25C, bandbending is obtained in the silicon substrate 600 and the impuritysemiconductor region 660 with passivation layer 680 interposedtherebetween, whereby the diffusion current 602 b due to holes can besuppressed.

In each of the photoelectric conversion devices having the structuresshown in FIG. 25A and FIG. 28A, the conductivity type of the siliconsubstrate 600 is not necessarily n-type and may be i-type. The carrierconcentration of the silicon substrate itself of the photoelectricconversion layer is made low, so that potential barrier for holes on theback surface of the silicon substrate and band bending width can beeasily obtained although the potential barrier for electrons on thesurface of the silicon substrate is lowered. Further, with the use of ani-type silicon substrate, a diffusion length can be increased becausethe carrier concentration is extremely low. Accordingly, overall diodecurrent including thermal release current due to electrons and thediffusion current due to holes can be reduced, and voltage can begenerated by photovoltaic power both at the junction between the oxidesemiconductor layer 610 and the silicon substrate 600 and the junctionbetween the silicon substrate 600 and the second electrode 691.

A plurality of oxides is mixed to the oxide semiconductor layer 610,whereby the conductivity type can be changed. For example, molybdenumoxide is formed to have a mixed composition including molybdenumtrioxide (MoO₃) and molybdenum oxide (MoO_(y) (2<y<3)) having anintermediate composition between molybdenum dioxide and molybdenumtrioxide, so that p-type conductivity can be provided. The mixedcomposition contains MoO_(y) (2<y<3) at 4% or more, so that a p-typesemiconductor with a high carrier concentration can be obtained. Notethat the term “p-type conductivity” herein means that the Fermi level iscloser to the valence band than to the conduction band, holes that arep-type carriers can be transferred, and current-voltage (I-V)characteristics of an element connected to a semiconductor materialhaving n-type conductivity exhibit rectifying properties by band bendingdue to the difference in work functions caused when the material havingp-type conductivity is bonded to a semiconductor material having n-typeconductivity.

Examples of the above-described molybdenum oxide (MoO_(y) (2<y<3))having an intermediate composition between molybdenum dioxide andmolybdenum trioxide include Mo₂O₅, Mo₃O₈, Mo₈O₂₃, Mo₉O₂₆, Mo₄O₁₁,Mo₁₇O₄₇, Mo₅O₁₄, and the one which has an intermediate compositionbetween MoO₂ and MoO₃ due to a deficiency of a part of oxygen atoms inMoO₃. These can be formed by reduction of a part of MoO₃ that is used asa raw material.

Further, the molybdenum oxide film has a high passivation effect and canreduce defects on a surface of silicon, which can improve the lifetimeof carriers.

Further, as shown in FIGS. 29A and 29B and FIGS. 30A, 30B, and 30C, thephotoelectric conversion device of one embodiment of the presentinvention does not necessarily have the silicon oxide layer 611. Whenthe silicon oxide layer 611 is not formed and surface recombination atthe interface between the silicon substrate 600 and the oxidesemiconductor layer 610 is suppressed, voltage drop by the resistance ofthe silicon oxide layer 611 can be reduced and output can be improved.

As for the method for manufacturing the photoelectric conversion deviceshown in FIG. 25A, the methods for manufacturing the photoelectricconversion devices shown in FIGS. 16A and 16B described in Embodiment 4can be referred to. Note that the second electrode 691 formed over theother surface of the silicon substrate 600 preferably contains at leastone of Mg, MgO, MgAg, MgIn, AlLi, BaO, SrO, CaO, GdB, YB₆, LaB₆, Y, Hf,Nd, La, Ce, Sm, Ca, and Gd. The second electrode 691 formed using anyone of the materials can be formed by a sputtering method, anevaporation method, or the like. Further, the second electrode 691 mayhave a structure in which the above material and a low-resistantmaterial such as Al and Ag or a conductive resin such as a silver pasteare stacked.

In order to form the photoelectric conversion device having thestructure shown in FIG. 33A, the semiconductor region 692 is formedbefore the formation of the second electrode 691. The semiconductorregion 692 can be formed using one or more of semiconductor materialsselected from MgO, BaO, SrO, and CaO. At this time, the second electrode691 is formed using one or more of conductors selected from Al, Ag, Mg,MgAg, MgIn, AlLi, GdB, YB₆, LaB₆, Y, Hf, Nd, La, Ce, Sm, Ca, and Gd.

In order to form the photoelectric conversion device having thestructure shown in FIG. 33B, before the formation of the secondelectrode 691, an impurity imparting the conductivity type opposite tothe silicon substrate 600 is diffused to the other surface of thesilicon substrate 600 so that the impurity semiconductor region 660 isformed, and then the semiconductor region 692 is formed. For theimpurity semiconductor region 660, for example, boron, aluminum,gallium, or the like is diffused. Alternatively, the impuritysemiconductor region 660 may be formed in such a manner that n⁻-type orp⁻-type amorphous silicon film or microcrystalline silicon film isformed over the other surface of the silicon substrate 600 by a plasmaCVD method or the like. Further, i-type amorphous silicon film ormicrocrystalline silicon film may be used instead of the impuritysemiconductor region 660. The semiconductor region 692 can be formedusing one or more of semiconductor materials selected from MgO, BaO,SrO, and CaO. At this time, the second electrode 691 can be formed usingone or more of conductors selected from Al, Ag, Mg, MgAg, MgIn, AlLi,GdB, YB₆, LaB₆, Y, Hf, Nd, La, Ce, Sm, Ca, and Gd.

This embodiment can be freely combined with any of other embodiments.

Embodiment 8

The above-described oxide semiconductor materials are applicable tovarious semiconductor devices such as a transistor, a diode, aphotoelectric conversion device, an electro-optical device, alight-emitting display device, a memory device, an imaging device, asemiconductor circuit, and an electronic device by making a bond with ametal, an i-type semiconductor material, or an n-type semiconductormaterial. For example, a p-channel type transistor can be formed by theuse of the oxide semiconductor material to a channel region of thetransistor. Further, a p-i junction device, a p-i-n junction device, ap-n junction device, and the like can be formed by the combination ofthe oxide semiconductor material with an i-type semiconductor layerand/or an n-type semiconductor layer. By the use of the oxidesemiconductor material, photoelectric characteristics and/or electriccharacteristics which are different from those in the case of using asilicon-based semiconductor material can be formed. Thus, variousadvantages of a semiconductor device such as improved electriccharacteristics, improved reliability, and lower power consumption canbe obtained. In this embodiment, the cases where the semiconductordevice is applied to electronic devices are described with reference toFIGS. 31A to 31F. Specifically, in this embodiment, the cases where thesemiconductor device is applied to an electronic device such as acomputer, a mobile phone (this may be also called a cellular phone or aportable phone device), a personal digital assistant (PDA; including aportable game device and a sound player, etc.), a digital camera, adigital video camera, an electronic paper, and a television device (thiscan be also called a television or a television receiver) are described.

FIG. 31A is a laptop personal computer including a housing 1701, ahousing 1702, a display portion 1703, a keyboard 1704, and the like. Atleast one of semiconductor devices provided in the housing 1701 and thehousing 1702 is formed using the semiconductor device of one embodimentof the present invention.

FIG. 31B illustrates a personal digital assistant (PDA) in which a mainbody 1711 is provided with a display portion 1713, an external interface1715, operation buttons 1714, and the like. Further, a stylus 1712 foroperation of the personal digital assistant, and the like are provided.A semiconductor device provided in the main body 1711 is formed usingthe semiconductor material of one embodiment of the present invention.

FIG. 31C is an e-book reader 1720 mounted with electronic paper, whichincludes two housings, a housing 1721 and a housing 1723. The housing1721 and the housing 1723 are provided with a display portion 1725 and adisplay portion 1727, respectively. The housing 1721 is connected to thehousing 1723 by a hinge 1737, so that the e-book reader can be openedand closed using the hinge 1737 as an axis. The housing 1721 is providedwith a power switch 1731, an operation key 1733, a speaker 1735, and thelike. At least one of semiconductor devices provided in the housing 1721and the housing 1723 is formed using the semiconductor material of oneembodiment of the present invention.

FIG. 31D is a mobile phone including two housings, a housing 1740 and ahousing 1741. Further, the housings 1740 and 1741 in a state where theyare developed as illustrated in FIG. 31D can shift by sliding to a statewhere one is lapped over the other; therefore, the size of the mobilephone can be reduced, which makes the mobile phone suitable for beingcarried. The housing 1741 includes a display panel 1742, a speaker 1743,a microphone 1744, a touch panel 1745, a pointing device 1746, a cameralens 1747, an external connection terminal 1748, and the like. Thehousing 1740 includes a solar cell 1749 for charging the mobile phone,an external memory slot 1750, and the like. In addition, an antenna isincorporated in the housing 1741. At least one of semiconductor devicesprovided in the housings 1740 and 1741 can be formed using the oxidesemiconductor material of one embodiment of the present invention.

FIG. 31E is a digital camera including a main body 1761, a displayportion 1767, an eyepiece 1763, an operation switch 1764, a displayportion 1765, a battery 1766, and the like. At least one ofsemiconductor devices provided in the housing 1761 can be formed usingan oxide semiconductor material of one embodiment of the presentinvention.

FIG. 31F is a television device including a housing 1771, a displayportion 1773, a stand 1775, and the like. The television device can beoperated by an operation switch of the housing 1771 or a remotecontroller 1780. At least one of semiconductor devices provided in thehousing 1771 and the remote controller 1780 can be formed using an oxidesemiconductor material of one embodiment of the present invention.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Example 1

In this example, electric characteristics of a diode element which wasformed using a molybdenum oxide film (MoO₃+MoO_(y) (2<y<3)) of oneembodiment of the present invention is described.

A diode was formed using the molybdenum oxide film containingMoO₃+MoO_(y) (2<y<3) the detail of which is described in Embodiment 1,and electric characteristics were evaluated. The conductivity type ofthe molybdenum oxide film can be seen from current-voltage (I-V)characteristics of the diode formed by the connection with a siliconsubstrate which has different conductivity type and carrierconcentration from the molybdenum oxide film.

The manufactured diode element includes a single crystal siliconsubstrate having one conductivity type, a molybdenum oxide film formedover one surface of the single crystal silicon substrate, an amorphoussilicon film formed over the other surface of the single crystal siliconsubstrate and having the same conductivity as the single crystal siliconsubstrate, an aluminum electrode formed over the molybdenum oxide film,and an aluminum electrode formed over the amorphous silicon film.

For the single crystal silicon substrate, two kinds of substrates, ann-type single crystal silicon substrate to which phosphorus (P) wasadded as an impurity imparting n-type conductivity and a p-type singlecrystal silicon substrate to which boron (B) was added as an impurityimparting p-type conductivity were used.

The molybdenum oxide film was formed with a thickness of 50 nm by themethod described in Embodiment 1.

The amorphous silicon film was formed by a plasma CVD method. In thecase of using an n-type single crystal silicon substrate, n-typeamorphous silicon is formed. In the case of using a p-type singlecrystal silicon substrate, p-type amorphous silicon was formed. Then-type amorphous silicon was formed by plasma-exciting a gas in whichmonosilane (SiH₄) and hydrogen-diluted phosphine (PH₃) were mixed. Thep-type amorphous silicon was formed by plasma-exciting a gas in whichmonosilane (SiH₄) and hydrogen-diluted diborane gas (B₂H₆) were mixed.Note that the amorphous silicon film was formed so that schottkyjunction was not formed between the single crystal silicon and a metalelectrode in the diode element to be formed and a carrier concentrationwas higher than the single crystal silicon to form an ohmic junction.Thus, a region in which an impurity having the same conductivity as thesilicon substrate is thermally diffused to the single crystal siliconsubstrate may be provided in addition to the amorphous silicon film.Here, an amorphous silicon film having the same conductivity as thesilicon film, which has a thickness of 10 nm, was used.

The aluminum electrode formed over the molybdenum oxide film and thealuminum electrode formed over the amorphous silicon film were formed byan evaporation method using resistance heating.

Through the above method, the diode was formed by the bond of themolybdenum oxide film and the single crystal silicon substrate. As theelectric characteristics of the manufactured diode, I-V characteristicswere measured by the application of voltage to the electrode on themolybdenum oxide side using the electrode on the single crystal siliconside as a ground.

FIG. 4A shows I-V characteristics of an element in which a molybdenumoxide film is formed over an n-type silicon substrate. FIG. 4B shows I-Vcharacteristics of an element in which a molybdenum oxide film is formedover a p-type silicon substrate.

The molybdenum oxide film has a mixed composition containing MoO₃ andMoO_(y) (2<y<3).

The elements using the molybdenum oxide films in each of which theproportion of MoO_(y) (2<y<3) is about 3% or less exhibit rectifyingproperties both in FIGS. 4A and 4B. On the other hand, the elementsusing the molybdenum oxide films in each of which the proportion ofMoO_(y) (2<y<3) is about 4% or more exhibit rectifying properties inFIG. 4A and ohmic properties in FIG. 4B.

Thus, it can be said that in the case of using the molybdenum oxide filmcontaining about 4% or more of MoO_(y) (2<y<3), a p-n junction is formedin the case where the molybdenum oxide film is bonded to the n-typesilicon substrate and a p-p junction is formed in the case where themolybdenum oxide film is bonded to the p-type silicon substrate.

The molybdenum oxide film in which the proportion of MoO_(y) (2<y<3) isabout 4% or more exhibits rectifying properties only in the case ofbeing bonded to the n-type silicon substrate even in a heterojunction,so that it is turned out that the molybdenum oxide film is a film havingp-type conductivity with highly concentrated carriers.

The molybdenum oxide in which the proportion of MoO_(y) (2<y<3) is about3% or less has a heterojunction with different band gaps; thusexhibiting rectifying properties both in the case of using an n-typesilicon substrate and p-type silicon substrate. Thus, it is difficult toidentify whether the Fermi level lies closer to the valence band side orthe conduction band side. That is, in the molybdenum oxide in which theproportion of MoO_(y) (2<y<3) is about 3% or less, the conductivity typeis not specified and may be n-type, i-type, or p-type.

The above-described experiment shows that in the molybdenum oxide filmsformed using a mixed composition of MoO₃ and MoO_(y) (2<y<3), themolybdenum oxide in which the proportion of MoO_(y) (2<y<3) is about 4%or more is an oxide semiconductor material having p-type conductivity.

This example can be implemented in appropriate combination with thestructures described in the above embodiments.

Example 2

In this example, experimental results of photoelectric conversiondevices of embodiments of the present invention are described.

Electric characteristics of the photoelectric conversion devices inwhich the molybdenum oxide film, which is described in Embodiment 1,containing MoO₃ and MoO_(y) (2<y<3) having an intermediate compositionbetween molybdenum dioxide and molybdenum trioxide was used as an oxidesemiconductor layer were evaluated.

The photoelectric conversion device was formed to have the structureshown in FIG. 19B in Embodiment 5. The molybdenum oxide film was usedfor the oxide semiconductor layer 410. The photoelectric conversiondevice that was formed so that the proportion of MoO_(y) (2<y<3) wasabout 22% is Cell A, the photoelectric conversion device that was formedso that the proportion of MoO_(y) (2<y<3) was about 10% is Cell B, andthe photoelectric conversion device that was formed so that theproportion of MoO_(y) (2<y<3) was about 3% is Cell C.

Note that in each of Cells A and B having the structure of thephotoelectric conversion device of one embodiment of the presentinvention, the oxide semiconductor layer 410 was formed using molybdenumoxide formed by evaporation method described in Embodiment 1, and thesilicon oxide layer 411 was formed using a mixture of a silicon dioxidefilm and a silicon film by a reaction caused at the interface betweenthe silicon oxide layer 411 and the silicon substrate 400 when thedeposition was performed. In Cell C, the oxide semiconductor layer 410was formed using molybdenum oxide formed by a sputtering method, and thesilicon oxide layer 411 was formed by a reaction caused at the interfacebetween the silicon oxide layer 411 and the silicon substrate 400 whenthe deposition was performed.

In each of Cells A, B, and C, an n-type single crystal silicon substratewas used as the silicon substrate 400. In each of Cells A and C, theoxide semiconductor layer was formed so as to have a thickness of about3 nm to 10 nm, and in Cell B, the oxide semiconductor layer was formedto have a thickness of about 47 nm to 50 nm. The silicon oxide layer 311formed at the interface between the silicon substrate 400 and the oxidesemiconductor layer 410 has a thickness of about 4 nm to 7 nm. Further,the cell areas of Cells A, B, and C were each 100 cm².

FIG. 32 shows I-V characteristics of the manufactured Cells A, B, and C.Simulated solar radiation (a solar spectrum was AM 1.5 G, andirradiation intensity was 100 mW/cm²) generated by a solar simulator wasused for the measurement under an environment temperature of 25° C.Short-circuit current densities (Jsc) of Cells A, B, and C are 32.8mA/cm², 29.4 mA/cm², and 0.01 mA/cm², respectively. Open-circuitvoltages (Voc) of Cells A, B, and C are 0.642 V, 0.635 V, and 0.028 V,respectively. That is, Cells A and B show high electric characteristics;specifically, Cell A shows the highest electric characteristics.

From the above results, each of Cells A and B is an oxide semiconductorlayer having preferable p-type conductivity. Further, in Cells A and B,holes that are p-type conductive carriers can be transferred into theoxide semiconductor layer; thus, holes excited by photo-absorption canbe collected at the electrode on the oxide semiconductor layer side.Therefore, in Cells A and B each having the structure of thephotoelectric conversion device of one embodiment of the presentinvention, a high short-circuit current density (Jsc) can be obtained.

This example can be implemented in appropriate combination with thestructures described in the above embodiments.

This application is based on Japanese Patent Application serial No.2012-032659 filed with the Japan Patent Office on Feb. 17, 2012,Japanese Patent Application serial No. 2012-032644 filed with the JapanPatent Office on Feb. 17, 2012, and Japanese Patent Application serialNo. 2012-092002 filed with the Japan Patent Office on Apr. 13, 2012, theentire contents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor material comprising: molybdenumtrioxide; and molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide, whereinthe semiconductor material has p-type conductivity.
 2. The semiconductormaterial according to claim 1, wherein the proportion of the molybdenumoxide having an intermediate composition between molybdenum dioxide andmolybdenum trioxide is 4% or more.
 3. A semiconductor device comprising:a silicon substrate; an oxide semiconductor layer over one surface ofthe silicon substrate; a first electrode over the oxide semiconductorlayer; an impurity region on the other surface of the silicon substrate;and a second electrode on the impurity region, wherein the oxidesemiconductor layer comprises molybdenum oxide (MoO_(y) (2<y<3)) havingan intermediate composition between molybdenum dioxide and molybdenumtrioxide, and wherein the silicon substrate has n-type conductivity andthe oxide semiconductor layer has p-type conductivity.
 4. Thesemiconductor device according to claim 3, wherein the proportion of themolybdenum oxide having an intermediate composition between molybdenumdioxide and molybdenum trioxide is 4% or more.
 5. The semiconductordevice according to claim 3, further comprising a light-transmittingconductive film over the oxide semiconductor layer.
 6. The semiconductordevice according to claim 3, wherein the impurity region has n-typeconductivity with a higher carrier concentration than that in thesilicon substrate.
 7. The semiconductor device according to claim 3,further comprising an insulating layer between the silicon substrate andthe second electrode, wherein the insulating layer has an openingoverlapping with the impurity region, and wherein the impurity region isin contact with the second electrode through the opening.
 8. Thesemiconductor device according to claim 3, wherein the silicon substratehas a texture structure provided with unevenness.
 9. The semiconductordevice according to claim 3, wherein the second electrode comprises amaterial having a lower work function than that in the siliconsubstrate.
 10. The semiconductor device according to claim 9, whereinthe second electrode comprises the material having a work function of4.2 eV or lower.
 11. The semiconductor device according to claim 9,wherein the second electrode comprises at least one of materialsselected from Mg, MgO, MgAg, MgIn, AlLi, BaO, SrO, CaO, GdB, YB₆, LaB₆,Y, Hf, Nd, La, Ce, Sm, Ca and Gd.
 12. A semiconductor device comprising:a silicon substrate; a first silicon semiconductor layer over onesurface of the silicon substrate; an oxide semiconductor layer over thefirst silicon semiconductor layer; a first electrode over the oxidesemiconductor layer; a second silicon semiconductor layer on the othersurface of the silicon substrate; a third silicon semiconductor layer onthe other surface of the silicon substrate, with the second siliconsemiconductor layer therebetween; and a second electrode on the thirdsilicon semiconductor layer, wherein the oxide semiconductor layercomprises molybdenum oxide (MoO_(y) (2<y<3)) having an intermediatecomposition between molybdenum dioxide and molybdenum trioxide, andwherein the silicon substrate has n-type conductivity and the oxidesemiconductor layer has p-type conductivity.
 13. The semiconductordevice according to claim 12, wherein the proportion of the molybdenumoxide having an intermediate composition between molybdenum dioxide andmolybdenum trioxide is 4% or more.
 14. The semiconductor deviceaccording to claim 12, further comprising a light-transmittingconductive film over the oxide semiconductor layer.
 15. Thesemiconductor device according to claim 12, wherein the siliconsubstrate has a texture structure provided with unevenness.
 16. Thesemiconductor device according to claim 12, wherein the second electrodecomprises a material having a lower work function than that in thesilicon substrate.